Electrically driven spin resonance in silicon carbide color centers

Abstract

We demonstrate that the spin of optically addressable point defects can be coherently driven with AC electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of high-frequency electric fields, and the characterization of defect spin multiplicity. While we control defects in SiC, these methods apply to spin systems in many semiconductors, including the nitrogen-vacancy center in diamond. Electrically driven spin resonance offers a viable route towards scalable quantum control of electron spins in a dense array.

11 pages, 4 figures

References in corpus (11)

• Coherent control of a single electron spin with electric fields
• Electrically driven single electron spin resonance in a slanting Zeeman field
• Scalable quantum register based on coupled electron spins in a room temperature solid
• Polytype control of spin qubits in silicon carbide
• Orbital mechanisms of electron spin manipulation by an electric field
• Mechanical spin control of nitrogen-vacancy centers in diamond
• Hyperfine-mediated gate-driven electron spin resonance
• Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
• Room-temperature manipulation and decoherence of a single spin in diamond
• Coherent spin control by electrical manipulation of the magnetic anisotropy
• All-electrical control of single ion spins in a semiconductor

Cited by in corpus (46)

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• Quantum decoherence dynamics of divacancy spins in silicon carbide
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
• Optical polarization of nuclear spins in silicon carbide
• Double-quantum spin-relaxation limits to coherence of near-surface nitrogen-vacancy centers
• Spin-strain interaction in nitrogen-vacancy centers in diamond
• Universal coherence protection in a solid-state spin qubit
• All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
• High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide
• Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
• High-Sensitivity Temperature Sensing Using an Implanted Single Nitrogen-Vacancy Center Array in Diamond
• High precision vector magnetometry with uniaxial quantum centers in silicon carbide
• Spin and optical properties of silicon vacancies in silicon carbide (a review)
• Electrically driven optical interferometry with spins in silicon carbide
• Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
• Theoretical model of the dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide
• Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure
• Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide
• Optically Enhanced Electric Field Sensing Using Nitrogen-Vacancy Ensembles
• Coherent control of defect spins in silicon carbide above 550 K
• Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies
• Subharmonic transitions and Bloch-Siegert shift in electrically driven spin resonance
• Self-protected nanoscale thermometry based on spin defects in silicon carbide
• Spin-photon entanglement interfaces in silicon carbide defect centers
• Local vibrational modes of Si vacancy spin qubits in SiC
• Electron nuclear interactions and electronic structure of spin 3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study
• Electric-Field Programmable Spin Arrays for Scalable Quantum Repeaters
• Polarization study of single color centers in aluminum nitride
• Interplay between charge and spin noise in the near-surface theory of decoherence and relaxation of $C_{3v}$ symmetry qutrit spin-1 centers
• Suppression of the optical linewidth and spin decoherence of a quantum spin center in a $p$$-$$n$ diode
• Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
• Theory of spin center sensing of diffusion
• Qubit guidelines for solid-state spin defects
• Adiabaticity of spin dynamics in diamond nitrogen vacancy centers in time-dependent magnetic fields
• Magnetoacoustic Resonance to Probe Quadrupole-Strain Coupling in a Diamond Nitrogen-Vacancy Center as a Spin-Triplet System
• Control of all the transitions between ground state manifolds of nitrogen vacancy centers in diamonds by applying external magnetic driving fields
• Theory of Field-Angle-Resolved Magnetoacoustic Resonance in Spin-Triplet Systems for Application to Nitrogen-Vacancy Centers in Diamond
• Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC
• Robotic vectorial field alignment for spin-based quantum sensors
• Controlled epitaxy of room-temperature quantum emitters in gallium nitride
• Fast Phase-manipulation of the Single Nuclear Spin in Solids by Rotating Fields
• Electrical Control for Extension of Ramsey Spin Coherence Time of Ion-Implanted Nitrogen Vacancy Centers in diamond