Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide

Abstract

Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.

References in corpus (11)

• Quantum Computation with Quantum Dots
• Sensing electric fields using single diamond spins
• Quantum computing with defects
• Electron spin coherence exceeding seconds in high purity silicon
• Universal digital quantum simulation with trapped ions
• Dynamical Decoupling of a single electron spin at room temperature
• Quantum control of proximal spins using nanoscale magnetic resonance imaging
• Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC
• Electrical Tuning of Single Nitrogen-Vacancy Center Optical Transitions Enhanced by Photoinduced Fields
• Optical detection of single electron spin resonance in a quantum dot
• Optical spin pumping of modulation doped electrons probed by a two-color Kerr rotation technique

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