Locking of electron spin coherence over fifty milliseconds in natural silicon carbide

Abstract

We demonstrate that silicon carbide (SiC) with natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over unexpectedly long time approaching 0.1 seconds. The spin-locked subspace with drastically reduced decoherence rate is attained through the suppression of heteronuclear spin cross-talking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. We identify several phonon-assisted mechanisms of spin-lattice relaxation, ultimately limiting quantum coherence, and find that it can be extremely long at cryogenic temperature, equal or even longer than 8 seconds. Our approach may be extended to other polyatomic compounds and open a path towards improved qubit memory for wafer-scale quantum techmologies.

Added extended data analysis based on quantum process tomography, discussion of spin-lattice relaxation mechanisms

References in corpus (23)

• Quantum Computing
• High-sensitivity diamond magnetometer with nanoscale resolution
• Universal dynamical decoupling of a single solid-state spin from a spin bath
• Coherent control of single spins in silicon carbide at room temperature
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Robust dynamical decoupling for quantum computing and quantum memory
• Dynamical Decoupling of a single electron spin at room temperature
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
• Single-spin magnetometry with multi-pulse sensing sequences
• Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
• Optical polarization of nuclear spins in silicon carbide
• Comparison of dynamical decoupling protocols for a nitrogen-vacancy center in diamond
• All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
• Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath
• Radio-frequency magnetometry using a single electron spin
• Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature
• Surface code with decoherence: An analysis of three superconducting architectures
• High precision vector magnetometry with uniaxial quantum centers in silicon carbide
• Quantum dephasing in a gated GaAs triple quantum dot due to nonergodic noise
• Dynamical control of electron spin coherence in a quantum dot
• Multiphoton coherent manipulation in large-spin qubits
• Robust Dynamical Decoupling for Arbitrary Quantum States of a Single NV Center in Diamond

Cited by in corpus (57)

• Semiconductor Qubits In Practice
• High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Room Temperature Coherent Control of Spin Defects in hexagonal Boron Nitride
• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
• Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
• Quantum properties of dichroic silicon vacancies in silicon carbide
• Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
• Nanomaterials for Quantum Information Science and Engineering
• High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide
• Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
• Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
• Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
• Spin and optical properties of silicon vacancies in silicon carbide (a review)
• Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
• Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam
• Resonant optical spin initialization and readout of single silicon vacancies in 4H-SiC
• Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface
• Influence of irradiation on defect spin coherence in silicon carbide
• Self-protected nanoscale thermometry based on spin defects in silicon carbide
• Entanglement of dark electron-nuclear spin defects in diamond
• Novel color center platforms enabling fundamental scientific discovery
• Local vibrational modes of Si vacancy spin qubits in SiC
• nanoTesla magnetometry with the silicon vacancy in silicon carbide
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission
• Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC
• Optically detected spin-mechanical resonance in silicon carbide membranes
• Stress-controlled zero-field spin splitting in silicon carbide
• Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam
• Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
• Precise characterization of a silicon carbide waveguide fiber interface
• Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
• Superradiance of Spin Defects in Silicon Carbide for Maser Applications
• 14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
• Characterization of single shallow silicon-vacancy centers in 4H-SiC
• Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature
• Quantum enhanced electric field mapping within semiconductor devices
• Nuclear Spin Engineering for Quantum Information Science
• Silicon Carbide Metasurfaces for Controlling the Spontaneous Emission of Embedded Color Centers
• Silicon Carbide photonic platform based on suspended subwavelength waveguides
• Qubit guidelines for solid-state spin defects
• Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide
• Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
• A Concise Primer on Solid-State Quantum Emitters
• Engineering spin defects in hexagonal boron nitride
• Theory of Magnetoacoustic Resonance to Probe Multipole Effects Due to a Crystal Field Quartet
• On-demand generation of shallow silicon vacancy in silicon carbide
• Temperature anomaly of the V${}_{S}i$ and V${}_C$ vacancy spin coherence time in 4H-SiC
• Semiconductor Room-Temperature Maser
• Nuclear spin polarization in silicon carbide at room temperature in the Earth's magnetic field
• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator
• Coupling 4H-Silicon Carbide spins to a microwave resonator at milli-Kelvin temperature
• Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout
• Extending Qubit Coherence Time via Hybrid Dynamical Decoupling
• Novel Magnetoacoustic Resonance Technique for Exploring Hidden Quadrupoles in a Crystal Field Quartet
• Acoustically induced coherent spin trapping