Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath

Abstract

In this paper, we study the electron spin decoherence of single defects in silicon carbide (SiC) nuclear spin bath. We find that, although the natural abundance of ${}^{29}\mathrm{Si}$ ($p_{\mathrm{Si}}=4.7\%$) is about 4 times larger than that of ${}^{13}\mathrm{C}$ ($p_{\mathrm{C}}=1.1\%$), the electron spin coherence time of defect centers in SiC nuclear spin bath in strong magnetic field ($B>300\mathrm{Gauss}$) is longer than that of nitrogen-vacancy (NV) centers in ${}^{13}\mathrm{C}$ nuclear spin bath in diamond. The reason for this counter-intuitive result is the suppression of heteronuclear-spin flip-flop process in finite magnetic field. Our results show that electron spin of defect centers in SiC are excellent candidates for solid state spin qubit in quantum information processing.

6 pages, 6 figures

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• Theory of electron spin decoherence by interacting nuclear spins in a quantum dot
• Quantum many-body theory of qubit decoherence in a finite-size spin bath
• Nuclear spin pair coherence in diamond for atomic scale magnetometry
• Restoring Coherence Lost to a Slow Interacting Mesoscopic Bath
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Cited by in corpus (6)

• Coherent control of single spins in silicon carbide at room temperature
• Optical polarization of nuclear spins in silicon carbide
• Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies
• All-optical coherent population trapping with defect spin ensembles in silicon carbide
• Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide
• Quantum Zeno effect in a nitrogen-vacancy center embedded in a spin bath