All-optical coherent population trapping with defect spin ensembles in silicon carbide

Abstract

Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions, with properties that are similar to the nitrogen-vacancy defect in diamond. We report experiments on 4H-SiC that investigate all-optical addressing of spin states with the zero-phonon-line transitions. Our magneto-spectroscopy results identify the spin $S=1$ structure of the ground and excited state, and a role for decay via intersystem crossing. We use these results for demonstrating coherent population trapping of spin states with divacancy ensembles that have particular orientations in the SiC crystal.

arXiv comment28 page document: Pages 1-14 main text (with 3 figures); pages 15-28 supplementary information (with 5 figues). v2 has minor corrections

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• Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
• Excitation properties of the divacancy in 4H-SiC
• Identification and tunable optical coherent control of transition-metal spins in silicon carbide
• Spin decontamination for magnetic dipolar coupling calculations: Application to high-spin molecules and solid-state spin qubits
• Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC
• Electron nuclear interactions and electronic structure of spin 3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study
• Laser writing and spin control of near infrared emitters in silicon carbide
• Broadband single-mode planar waveguides in monolithic 4H-SiC
• Silicon photonic crystal cavities at near band-edge wavelengths
• Qubit guidelines for solid-state spin defects
• Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC