All-optical coherent population trapping with defect spin ensembles in silicon carbide

Abstract

Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions, with properties that are similar to the nitrogen-vacancy defect in diamond. We report experiments on 4H-SiC that investigate all-optical addressing of spin states with the zero-phonon-line transitions. Our magneto-spectroscopy results identify the spin $S=1$ structure of the ground and excited state, and a role for decay via intersystem crossing. We use these results for demonstrating coherent population trapping of spin states with divacancy ensembles that have particular orientations in the SiC crystal.

28 page document: Pages 1-14 main text (with 3 figures); pages 15-28 supplementary information (with 5 figues). v2 has minor corrections

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Cited by in corpus (3)

• Broadband single-mode planar waveguides in monolithic 4H-SiC
• Qubit guidelines for solid-state spin defects
• Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC