Isolated electron spins in silicon carbide with millisecond-coherence times

Abstract

The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries. Nonetheless, because the electronic states of SiC defects can have sharp optical and spin transitions, they are increasingly recognized as a valuable resource for quantum-information and nanoscale-sensing applications. Here, we show that individual electron spin states in highly purified monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects, these states exhibit exceptionally long ensemble Hahn-echo spin coherence, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route to wafer-scale quantum technologies.

11 pages, 3 figures

References in corpus (4)

• Coherent control of single spins in silicon carbide at room temperature
• Coherence of Nitrogen-Vacancy Electronic Spin Ensembles in Diamond
• Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
• Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers

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