Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering

Abstract

This review provides an overview of defects in silicon carbide (SiC) with potential applications as quantum qubits. It begins with a brief introduction to quantum qubits and existing qubit platforms, outlining the essential criteria a defect must meet to function as a viable qubit. The focus then shifts to the most promising defects in SiC, notably the silicon vacancy (VSi) and divacancy (VC-VSi). A key challenge in utilizing these defects for quantum applications is their precise and controllable creation. Various fabrication techniques, including irradiation, ion implantation, femtosecond laser processing, and focused ion beam methods, have been explored to create these defects. Designed as a beginner-friendly resource, this review aims to support early-career experimental researchers entering the field of SiC-related quantum qubits. Providing an introduction to defect-based qubits in SiC offers valuable insights into fabrication strategies, recent progress, and the challenges that lie ahead.

References in corpus (23)

• Quantum Computing
• New directions in the pursuit of Majorana fermions in solid state systems
• Atomic physics and quantum optics using superconducting circuits
• Silicon Quantum Electronics
• Quantum computing with defects
• Coherent control of single spins in silicon carbide at room temperature
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Semiconductor Qubits In Practice
• Electrical and optical control of single spins integrated in scalable semiconductor devices
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties
• Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
• Optical charge state control of spin defects in 4H-SiC
• Noisy intermediate-scale quantum computers
• Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers
• Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
• Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC
• First principles predictions of magneto-optical data for semiconductor defects: the case of divacancy defects in 4H-SiC
• Room-temperature control and electrical readout of individual nitrogen-vacancy nuclear spins
• Silicon carbide diodes for neutron detection
• Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review
• Photonic Quantum Information Processing