Coherent control of single spins in silicon carbide at room temperature

Abstract

Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fabrication techniques. Here we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence time under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.

References in corpus (8)

• Universal dynamical decoupling of a single solid-state spin from a spin bath
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Theory of electron spin decoherence by interacting nuclear spins in a quantum dot
• Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
• Electron spin decoherence in isotope-enriched silicon
• Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath
• Hybrid solid state qubits: the powerful role of electron spins
• Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

Cited by in corpus (104)

• Isolated electron spins in silicon carbide with millisecond-coherence times
• Quantum sensing with arbitrary frequency resolution
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Optical charge state control of spin defects in 4H-SiC
• Optical parametric oscillation in silicon carbide nanophotonics
• Optical polarization of nuclear spins in silicon carbide
• Wide Field Imaging of van der Waals Ferromagnet Fe3GeTe2 by Spin Defects in Hexagonal Boron Nitride
• Silicon carbide for integrated photonics
• Optical thermometry based on level anticrossing in silicon carbide
• Long-term data storage in diamond
• Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
• Microscopic diamond Solid-Immersion-Lenses fabricated around single defect ceneters by focussed ion beam milling
• Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
• Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
• Efficient electrical spin readout of NV- centers in diamond
• Quantum sensing and imaging with spin defects in hexagonal boron nitride
• Room-temperature coherent optical manipulation of single-hole spins in solution-grown perovskite quantum dots
• Room-Temperature Quantum Emitter in Aluminum Nitride
• Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature
• Single Spin Magnetic Resonance
• Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies
• Proposal for detection of a single electron spin in a microwave resonator
• Spin-photon entanglement interfaces in silicon carbide defect centers
• Optical switching of defect charge states in 4H-SiC
• Wide bandgap semiconductors for radiation detection: A review
• Entangling remote qubits using the single-photon protocol: an in-depth theoretical and experimental study
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Bright single photon sources in lateral silicon carbide light emitting diodes
• Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin and charge state initialization
• All-optical coherent population trapping with defect spin ensembles in silicon carbide
• Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography
• Photon emission correlation spectroscopy as an analytical tool for quantum defects
• Symmetric carbon tetramers forming chemically stable spin qubits in hBN
• Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide
• Scalable quantum memory nodes using nuclear spins in Silicon Carbide
• Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review
• Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
• Stress-controlled zero-field spin splitting in silicon carbide
• High-Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO2
• Introduction of spin centers in single crystals of Ba${}_2$CaWO${}_{6-\delta }$
• Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide
• Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam
• Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC
• Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
• Room-Temperature entangled quantum processor on integrated semiconductor photonics platform
• Plasmonic-enhanced bright single spin defects in silicon carbide membranes
• Precise characterization of a silicon carbide waveguide fiber interface
• Vacancy-related color centers in twodimensional silicon carbide monolayers
• Programmable Quantum Processors based on Spin Qubits with Mechanically-Mediated Interactions and Transport
• Cavity Quantum Electrodynamics Design with Single Photon Emitters in Hexagonal Boron Nitride
• Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
• Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
• M-center in low-energy electron irradiated 4H-SiC
• Laser writing and spin control of near infrared emitters in silicon carbide
• Active spin lattice hyperpolarization: Application to hexagonal boron nitride color centers
• Characterization of single shallow silicon-vacancy centers in 4H-SiC
• 14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
• Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC
• Fiber-integrated silicon carbide silicon vacancy-based magnetometer
• Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
• Quantum enhanced electric field mapping within semiconductor devices
• Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
• Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor
• Nuclear Spin Engineering for Quantum Information Science
• Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties
• Predicting Solid State Material Platforms for Quantum Technologies
• Site-dependent properties of quantum emitters in nanostructured silicon carbide
• Characterization of a quasi-static environment with a qubit
• Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
• Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering
• Fresnel-type Solid Immersion Lens for efficient light collection from quantum defects in diamond
• Optimum surface-passivation schemes for near-surface spin defects in silicon carbide
• Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide
• Encoded probabilistic imaginary-time evolution on a trapped-ion quantum computer for ground and excited states of spin qubits
• Scalable, nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures
• Many-Body Entanglement in Solid-State Emitters
• Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
• Towards Identifying the PL6 Center in SiC: From First-Principles Screening to Hyperfine Validation of Competing Defect Candidates
• Photoelectrical detection and characterization of divacancy and PL5-PL7 spins in silicon carbide
• A Concise Primer on Solid-State Quantum Emitters
• Theory of Magnetoacoustic Resonance to Probe Multipole Effects Due to a Crystal Field Quartet
• Robotic vectorial field alignment for spin-based quantum sensors
• Photoionization detection of a single Er${}^{3+}$ ion with sub-100-ns time resolution
• Twenty years of quantum contextuality at USTC
• Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
• Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide
• Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes
• Room-temperature coherent control of implanted defect spins in silicon carbide
• Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform
• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator
• Stability and molecular pathways to the formation of spin defects in silicon carbide
• Temperature anomaly of the V${}_{S}i$ and V${}_C$ vacancy spin coherence time in 4H-SiC
• First-principles predictions of out-of-plane group IV and V dimers as high-symmetry high-spin defects in hexagonal boron nitride
• Novel Magnetoacoustic Resonance Technique for Exploring Hidden Quadrupoles in a Crystal Field Quartet
• Quantifying electron-nuclear spin entanglement dynamics in central-spin systems using one-tangles
• Optical spin defect pairs in cubic boron nitride
• Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node
• Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields
• Robust Aluminum Nitride Passivation of Silicon Carbide with Near-Surface Quantum Emitters for Quantum Computing and Sensing Applications
• All-Optical Photoluminescence Response of Nitrogen-Vacancy Ensembles in Diamond at Low Magnetic Fields
• Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout
• Optical levitation of fluorescent silicon carbide nanoparticles in vacuum
• Effect of Emitters on Quantum State Transfer in Coupled Cavity Arrays