Coherent control of single spins in silicon carbide at room temperature

Abstract

Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular progress but either miss established nanotechnology or an efficient spin-photon interface. Silicon carbide (SiC) combines the strength of both systems: It has a large bandgap with deep defects and benefits from mature fabrication techniques. Here we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence time under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.

References in corpus (20)

• Quantum computing with defects
• Universal dynamical decoupling of a single solid-state spin from a spin bath
• Single-shot readout of an electron spin in silicon
• Room temperature coherent control of coupled single spins in solid
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Polytype control of spin qubits in silicon carbide
• Theory of electron spin decoherence by interacting nuclear spins in a quantum dot
• Sensing remote nuclear spins
• Theory of nuclear induced spectral diffusion: Spin decoherence of phosphorus donors in Si and GaAs quantum dots
• Decoherence and dynamical decoupling control of nitrogen-vacancy center electron spins in nuclear spin baths
• Electrically and mechanically tunable electron spins in silicon carbide color centers
• Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide
• Electron spin decoherence in isotope-enriched silicon
• Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC
• The breakdown flash of Silicon Avalance Photodiodes - backdoor for eavesdropper attacks?
• Readout and control of a single nuclear spin with a meta-stable electron spin ancilla
• Electron Spin Decoherence in Silicon Carbide Nuclear Spin Bath
• Electrically driven spin resonance in silicon carbide color centers
• Hybrid solid state qubits: the powerful role of electron spins
• Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

Cited by in corpus (219)

• Quantum sensing
• Quantum information processing with superconducting circuits: a review
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Semiconductor Qubits In Practice
• Laser writing of coherent colour centres in diamond
• Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride
• Quantum sensing with arbitrary frequency resolution
• One-second coherence for a single electron spin coupled to a multi-qubit nuclear-spin environment
• High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
• Electrical and optical control of single spins integrated in scalable semiconductor devices
• Probing spin-phonon interactions in silicon carbide with Gaussian acoustics
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Quantum decoherence dynamics of divacancy spins in silicon carbide
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Single-photon emitting diode in silicon carbide
• Entanglement and control of single quantum memories in isotopically engineered silicon carbide
• Scalable Quantum Photonics with Single Color Centers in Silicon Carbide
• Spin-Dependent Quantum Emission in Hexagonal Boron Nitride at Room Temperature
• Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
• Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
• Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers
• Optical absorption and emission mechanisms of single defects in hexagonal boron nitride
• Bright room temperature single photon source at telecom range in cubic silicon carbide
• Optical charge state control of spin defects in 4H-SiC
• Purcell enhancement of a single silicon carbide color center with coherent spin control
• Hybrid nanodiamond-YIG systems for efficient quantum information processing and nanoscale sensing
• Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond
• Optical parametric oscillation in silicon carbide nanophotonics
• Quantum properties of dichroic silicon vacancies in silicon carbide
• Locking of electron spin coherence over fifty milliseconds in natural silicon carbide
• Optical polarization of nuclear spins in silicon carbide
• Wide Field Imaging of van der Waals Ferromagnet Fe3GeTe2 by Spin Defects in Hexagonal Boron Nitride
• Ultralong Dephasing Times in Solid-State Spin Ensembles via Quantum Control
• Tailoring spin defects in diamond
• Silicon carbide for integrated photonics
• Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center
• All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
• Broad diversity of near-infrared single-photon emitters in silicon
• Optical thermometry based on level anticrossing in silicon carbide
• Long-term data storage in diamond
• Optical manipulation of Berry phase in a solid-state spin qubit
• Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
• Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces
• Microscopic diamond Solid-Immersion-Lenses fabricated around single defect ceneters by focussed ion beam milling
• Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
• High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide
• Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
• Readout and control of a single nuclear spin with a meta-stable electron spin ancilla
• Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
• Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature
• Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
• Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
• Bright and photostable single-photon emitter in silicon carbide
• High precision vector magnetometry with uniaxial quantum centers in silicon carbide
• Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions
• Robust All-Optical Single-Shot Readout of NV Centers in Diamond
• Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide
• Proposal of room-temperature diamond maser
• Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
• Efficient electrical spin readout of NV- centers in diamond
• Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
• Spin and optical properties of silicon vacancies in silicon carbide (a review)
• Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
• Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
• Quantum sensing and imaging with spin defects in hexagonal boron nitride
• Quantum well stabilized point defect spin qubits
• Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam
• Room-Temperature Quantum Emitter in Aluminum Nitride
• Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature
• Room-temperature coherent optical manipulation of single-hole spins in solution-grown perovskite quantum dots
• Electron Paramagnetic Resonance signature of point defects in neutron irradiated hexagonal Boron Nitride
• Theoretical model of the dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide
• Excitation properties of the divacancy in 4H-SiC
• Single Spin Magnetic Resonance
• Resonant optical spin initialization and readout of single silicon vacancies in 4H-SiC
• Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure
• Identification and tunable optical coherent control of transition-metal spins in silicon carbide
• Spectrally reconfigurable quantum emitters enabled by optimized fast modulation
• Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface
• Influence of irradiation on defect spin coherence in silicon carbide
• Coherent control of defect spins in silicon carbide above 550 K
• Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies
• Multi-Wave Coherent Control of a Solid State Single Emitter
• Vector magnetometry based on S=3/2 electronic spins
• Self-protected nanoscale thermometry based on spin defects in silicon carbide
• Proposal for detection of a single electron spin in a microwave resonator
• Photophysics of GaN single photon sources in the visible spectral range
• Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers
• Spin-photon entanglement interfaces in silicon carbide defect centers
• Measurement of transverse hyperfine interaction by forbidden transitions
• Novel color center platforms enabling fundamental scientific discovery
• Optical switching of defect charge states in 4H-SiC
• Wide bandgap semiconductors for radiation detection: A review
• Entangling remote qubits using the single-photon protocol: an in-depth theoretical and experimental study
• Local vibrational modes of Si vacancy spin qubits in SiC
• Quantum metrology with a single spin-$3/2$ defect in silicon carbide
• nanoTesla magnetometry with the silicon vacancy in silicon carbide
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Bright single photon sources in lateral silicon carbide light emitting diodes
• Engineering electron-phonon coupling of quantum defects to a semi-confocal acoustic resonator
• Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin and charge state initialization
• The electron-phonon processes of the nitrogen-vacancy center in diamond
• A multiconfigurational study of the negatively charged nitrogen-vacancy center in diamond
• Spin polarization through Intersystem Crossing in the silicon vacancy of silicon carbide
• All-optical coherent population trapping with defect spin ensembles in silicon carbide
• Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing
• Delayed entanglement echo for individual control of a large number of nuclear spins
• Spin-orbit dynamics of single acceptor atoms in silicon
• Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography
• Spin decontamination for magnetic dipolar coupling calculations: Application to high-spin molecules and solid-state spin qubits
• Photon emission correlation spectroscopy as an analytical tool for quantum defects
• Decoherence of two entangled spin qubits coupled to an interacting sparse nuclear spin bath: application to nitrogen vacancy centers
• Photoluminescence Lineshapes for Color Centers in Silicon Carbide from Density Functional Theory Calculations
• Theoretical polarization of zero phonon lines in point defects
• Elliott-Yafet Spin-Phonon Relaxation Times from First Principles
• Longitudinal spin relaxation model applied to point defect qubit systems
• Microwave-assisted spectroscopy technique for studying charge state in nitrogen-vacancy ensembles in diamond
• Symmetric carbon tetramers forming chemically stable spin qubits in hBN
• Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission
• Quantum photonics in triangular-cross-section nanodevices in silicon carbide
• Temperature dependence of divacancy spin coherence in implanted silicon carbide
• Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy
• Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide
• Scalable quantum memory nodes using nuclear spins in Silicon Carbide
• Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC
• Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
• Characterization of the Si:Se+ spin-photon interface
• Simulation of higher-order topological phases in 2D spin-phononic crystal networks
• Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review
• Optically-pumped dynamic nuclear hyperpolarization in ${}^{13}$C enriched diamond
• Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
• Optically detected spin-mechanical resonance in silicon carbide membranes
• ${}^{29}$Si nuclear spins as a resource for donor spin qubits in silicon
• Stress-controlled zero-field spin splitting in silicon carbide
• High-Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO2
• Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide
• Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam
• Introduction of spin centers in single crystals of Ba${}_2$CaWO${}_{6-\delta }$
• Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC
• High-Q/V two-dimensional photonic crystals cavities in 3C-SiC
• Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
• High fidelity bi-directional nuclear qubit initialization in SiC
• Room-Temperature entangled quantum processor on integrated semiconductor photonics platform
• Plasmonic-enhanced bright single spin defects in silicon carbide membranes
• Precise characterization of a silicon carbide waveguide fiber interface
• Electron nuclear interactions and electronic structure of spin 3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study
• Predictive coupled-cluster isomer orderings for some Si${}_n$C${}_m$ ($m,n\le 12$) clusters; A pragmatic comparison between DFT and complete basis limit coupled-cluster benchmarks
• Vacancy-related color centers in twodimensional silicon carbide monolayers
• Programmable Quantum Processors based on Spin Qubits with Mechanically-Mediated Interactions and Transport
• Cavity Quantum Electrodynamics Design with Single Photon Emitters in Hexagonal Boron Nitride
• Nonclassical Light Generation from III-V and Group-IV Solid-State Cavity Quantum Systems
• Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
• Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC
• Precise high-fidelity electron-nuclear spin entangling gates in NV centers via hybrid dynamical decoupling sequences
• M-center in low-energy electron irradiated 4H-SiC
• Active spin lattice hyperpolarization: Application to hexagonal boron nitride color centers
• Laser writing and spin control of near infrared emitters in silicon carbide
• Improving spin-based noise sensing by adaptive measurements
• Characterization of single shallow silicon-vacancy centers in 4H-SiC
• 14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
• Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC
• Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
• Fiber-integrated silicon carbide silicon vacancy-based magnetometer
• Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature
• Quantum enhanced electric field mapping within semiconductor devices
• Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC
• Nuclear Spin Engineering for Quantum Information Science
• Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor
• Relaxation dynamics of spin 3/2 silicon vacancies in 4H-Silicon carbide
• Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties
• Predicting Solid State Material Platforms for Quantum Technologies
• Site-dependent properties of quantum emitters in nanostructured silicon carbide
• Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
• Characterization of a quasi-static environment with a qubit
• Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
• Silicon Carbide photonic platform based on suspended subwavelength waveguides
• Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering
• Single Molecule DNA Detection with an Atomic Vapor Notch Filter
• Fresnel-type Solid Immersion Lens for efficient light collection from quantum defects in diamond
• Hybrid nanophotonic-nanomagnonic SiC-YiG quantum sensor: I/ theoretical design and properties
• Subnanotesla quantum-interference magnetometry with a single spin in diamond
• Optimum surface-passivation schemes for near-surface spin defects in silicon carbide
• A QM/MM equation-of-motion coupled-cluster approach for predicting semiconductor color-center structure and emission frequencies
• Generalized scaling of spin qubit coherence in over 12,000 host materials
• Bottom up engineering of near-identical quantum emitters in atomically thin materials
• Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide
• Encoded probabilistic imaginary-time evolution on a trapped-ion quantum computer for ground and excited states of spin qubits
• Scalable, nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures
• Towards Identifying the PL6 Center in SiC: From First-Principles Screening to Hyperfine Validation of Competing Defect Candidates
• Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
• Many-Body Entanglement in Solid-State Emitters
• A Concise Primer on Solid-State Quantum Emitters
• Photoionization detection of a single Er${}^{3+}$ ion with sub-100-ns time resolution
• Robotic vectorial field alignment for spin-based quantum sensors
• Photoelectrical detection and characterization of divacancy and PL5-PL7 spins in silicon carbide
• Theory of Magnetoacoustic Resonance to Probe Multipole Effects Due to a Crystal Field Quartet
• Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies
• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator
• Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform
• Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
• Room-temperature coherent control of implanted defect spins in silicon carbide
• Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide
• On-demand generation of shallow silicon vacancy in silicon carbide
• Twenty years of quantum contextuality at USTC
• Stability and molecular pathways to the formation of spin defects in silicon carbide
• Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes
• Temperature anomaly of the V${}_{S}i$ and V${}_C$ vacancy spin coherence time in 4H-SiC
• Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields
• Electrical Control for Extension of Ramsey Spin Coherence Time of Ion-Implanted Nitrogen Vacancy Centers in diamond
• First-principles predictions of out-of-plane group IV and V dimers as high-symmetry high-spin defects in hexagonal boron nitride
• Optical spin defect pairs in cubic boron nitride
• Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node
• Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout
• Quantifying electron-nuclear spin entanglement dynamics in central-spin systems using one-tangles
• Effect of Emitters on Quantum State Transfer in Coupled Cavity Arrays
• Optical levitation of fluorescent silicon carbide nanoparticles in vacuum
• Novel Magnetoacoustic Resonance Technique for Exploring Hidden Quadrupoles in a Crystal Field Quartet
• All-Optical Photoluminescence Response of Nitrogen-Vacancy Ensembles in Diamond at Low Magnetic Fields
• Robust Aluminum Nitride Passivation of Silicon Carbide with Near-Surface Quantum Emitters for Quantum Computing and Sensing Applications