Photoelectrical detection and characterization of divacancy and PL5-PL7 spins in silicon carbide

Abstract

Photoelectrical detection of magnetic resonance (PDMR) offers a scalable alternative to optical readout of spin defects in semiconductors and is particularly promising for near-infrared (NIR) emitters, where photodetection is often challenging. Here, we demonstrate room-temperature coherent PDMR of PL3 (divacancy), PL5, PL6, and PL7 spins. PL7 and PL5 exhibit notably stronger PDMR than PL6 as opposed to optical detection, indicating higher ionization efficiency and suitability for electrical readout. Rabi oscillation and two-frequency spectroscopy reveal a previously undiscovered secondary resonance of PL7. We determine the zero-field splitting parameters of PL7 and assign the recently reported PL3a defect to PL7. The demonstrated PDMR of these NIR defects constitutes a key advancement toward quantum electronic devices. Also, the clarified spin parameters and ionization characteristics provide a solid foundation for advancing quantum technologies utilizing these defects regardless of the detection schemes.

arXiv comment16 pages, 4 figures

References in corpus (23)

• Quantum sensing
• Coherent control of single spins in silicon carbide at room temperature
• Polytype control of spin qubits in silicon carbide
• Quantum networks based on color centers in diamond
• Electrical and optical control of single spins integrated in scalable semiconductor devices
• Electrically and mechanically tunable electron spins in silicon carbide color centers
• Photoelectrical detection of electron spin resonance of nitrogen-vacancy centres in diamond
• Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
• Optical charge state control of spin defects in 4H-SiC
• Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
• Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
• Electrically driven optical interferometry with spins in silicon carbide
• Characterization and formation of NV centers in 3C, 4H and 6H SiC: an \emph{ab initio} study
• Quantum well stabilized point defect spin qubits
• Excitation properties of the divacancy in 4H-SiC
• First principles predictions of magneto-optical data for semiconductor defects: the case of divacancy defects in 4H-SiC
• Room-temperature control and electrical readout of individual nitrogen-vacancy nuclear spins
• Microwave saturation spectroscopy of nitrogen-vacancy ensembles in diamond
• Optical switching of defect charge states in 4H-SiC
• Pulsed photoelectric coherent manipulation and detection of NV centre spins in diamond
• Characterization of single shallow silicon-vacancy centers in 4H-SiC
• Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials
• Towards Identifying the PL6 Center in SiC: From First-Principles Screening to Hyperfine Validation of Competing Defect Candidates