Quantum well stabilized point defect spin qubits

Abstract

Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron x-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide (SiC) as a near-stacking fault axial divacancy and show how this model explains these defect's robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.

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• The M-center in 4H-SiC is a carbon self-interstitial
• Room-Temperature entangled quantum processor on integrated semiconductor photonics platform
• Plasmonic-enhanced bright single spin defects in silicon carbide membranes
• Na in Diamond: High Spin Defects Revealed by the ADAQ High-Throughput Computational Database
• Influence of extended defects on the formation energy, the hyperfine structure, and the zero-field splitting of NV centers in diamond
• Laser writing and spin control of near infrared emitters in silicon carbide
• Universal topological quantum computation with strongly correlated Majorana edge modes
• Assessing the potential of perfect screw dislocations in SiC for solid-state quantum technologies
• Towards Identifying the PL6 Center in SiC: From First-Principles Screening to Hyperfine Validation of Competing Defect Candidates
• NV-like Defects More Common Than Four-Leaf Clovers: A Perspective on High-Throughput Point Defect Data
• Photoelectrical detection and characterization of divacancy and PL5-PL7 spins in silicon carbide
• Spin-photon Qubits for Scalable Quantum Network