activity
20172019
most citedOptical charge state control of spin defects in 4H-SiC

155 citations · 155 across the 1 of their papers we have counts for

collaborators

9 papers

quant-ph2019

Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide

Berk Diler, Samuel J. Whiteley, Christopher P. Anderson +5

Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state wi…

physics.app-ph2019

Heterodyne detection of radio-frequency electric fields using point defects in silicon carbide

Gary Wolfowicz, Christopher P. Anderson, Samuel J. Whiteley +1

Sensing electric fields with high sensitivity, high spatial resolution and at radio frequencies can be challenging to realize. Recently, point defects in silicon carbide have shown…

quant-ph2019

Electrically driven optical interferometry with spins in silicon carbide

Kevin C. Miao, Alexandre Bourassa, Christopher P. Anderson +11

Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin's weak coupling to its environment bestows excellent coherence…

cond-mat.mes-hall2019

Quantum well stabilized point defect spin qubits

Ivády, J. Davidsson, N. Delegan +10

Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by…

cond-mat.mes-hall2018

Atomic layer deposition of titanium nitride for quantum circuits

A. Shearrow, G. Koolstra, S. J. Whiteley +6

Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. W…

cond-mat.mes-hall2018

Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy

S. J. Whiteley, F. J. Heremans, G. Wolfowicz +2

Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information scien…