Electrometry by optical charge conversion of deep defects in 4H-SiC

Abstract

Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high frequency (MHz-GHz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of ~41 (V/cm)**2 / $\sqrt{Hz}$. Finally, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator.

arXiv comment9 pages, 4 figures

References in corpus (18)

• High-sensitivity diamond magnetometer with nanoscale resolution
• Sensing electric fields using single diamond spins
• Photo induced ionization dynamics of the nitrogen vacancy defect in diamond investigated by single shot charge state detection
• Fluorescence thermometry enhanced by the quantum coherence of single spins in diamond
• Current measurement by real-time counting of single electrons
• All-optical thermometry and the thermal properties of the optically detected spin resonances of the NV center in nano-diamond
• Electrically and mechanically tunable electron spins in silicon carbide color centers
• Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
• Detection of a single fundamental charge with nanoscale resolution in ambient conditions using the NV${}^{-}$ center in diamond
• Optical charge state control of spin defects in 4H-SiC
• High-sensitivity, spin-based electrometry with an ensemble of nitrogen-vacancy centers in diamond
• Stark Tuning of Donor Electron Spins in Silicon
• Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
• Wide-Field Strain Imaging with Preferentially-Aligned Nitrogen-Vacancy Centers in Polycrystalline Diamond
• Excitation properties of the divacancy in 4H-SiC
• Quantum Sensing of Weak Radio-Frequency Signals by Pulsed Mollow Absorption Spectroscopy
• Optical switching of defect charge states in 4H-SiC
• Conditional control of donor nuclear spins in silicon using Stark shifts

Cited by in corpus (22)

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• Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing
• Optical and Strain Stabilization of Point Defects in Silicon Carbide