Detection and modeling of hole capture by single point defects under variable electric fields
arXiv:2306.01572 · doi:10.1021/acs.nanolett.3c00860
Abstract
Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photo-generated holes by an individual negatively-charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an externally gated potential to minimize space-charge effects, we find the capture probability under electric fields of variable sign and amplitude shows an asymmetric-bell-shaped response with maximum at zero voltage. To interpret these observations, we run semi-classical Monte Carlo simulations modeling carrier trapping through a cascade process of phonon emission, and obtain electric-field-dependent capture probabilities in good agreement with experiment. Since the mechanisms at play are insensitive to the trap characteristics, the capture cross sections we observe - largely exceeding those derived from ensemble measurements - should also be present in materials platforms other than diamond.
References in corpus (20)
- Quantum sensing
- Photo induced ionization dynamics of the nitrogen vacancy defect in diamond investigated by single shot charge state detection
- First-principles theory of nonradiative carrier capture via multiphonon emission
- Giant Rydberg Excitons in Cuprous Oxide
- Electrical and optical control of single spins integrated in scalable semiconductor devices
- Low Temperature Studies of Charge Dynamics of Nitrogen-Vacancy Defect in Diamond
- Photoelectrical detection of electron spin resonance of nitrogen-vacancy centres in diamond
- Nonrad: Computing Nonradiative Capture Coefficients from First Principles
- A comparative study of ab initio nonradiative recombination rate calculations under different formalisms
- Efficient electrical spin readout of NV- centers in diamond
- Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures
- Optical activation and detection of charge transport between individual color centers in room-temperature diamond
- Optically detected magnetic resonance in neutral silicon vacancy centers in diamond via bound exciton states
- Electrometry by optical charge conversion of deep defects in 4H-SiC
- Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors. Application to capture cross sections
- Towards a room-temperature spin quantum bus in diamond via optical spin injection, transport and detection
- Probing metastable space-charge potentials in a wide bandgap semiconductor
- A valleytronic diamond transistor: electrostatic control of valley-currents and charge state manipulation of NV centers
- Neutral Silicon Vacancy Centers in Diamond via Photoactivated Itinerant Carriers
- Long-term spin state storage using ancilla charge memories