Detection and modeling of hole capture by single point defects under variable electric fields
arXiv:2306.01572 · doi:10.1021/acs.nanolett.3c00860
Abstract
Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photo-generated holes by an individual negatively-charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an externally gated potential to minimize space-charge effects, we find the capture probability under electric fields of variable sign and amplitude shows an asymmetric-bell-shaped response with maximum at zero voltage. To interpret these observations, we run semi-classical Monte Carlo simulations modeling carrier trapping through a cascade process of phonon emission, and obtain electric-field-dependent capture probabilities in good agreement with experiment. Since the mechanisms at play are insensitive to the trap characteristics, the capture cross sections we observe - largely exceeding those derived from ensemble measurements - should also be present in materials platforms other than diamond.
References in corpus (7)
- First-principles theory of nonradiative carrier capture via multiphonon emission
- Giant Rydberg Excitons in Cuprous Oxide
- Low Temperature Studies of Charge Dynamics of Nitrogen-Vacancy Defect in Diamond
- A comparative study of ab initio nonradiative recombination rate calculations under different formalisms
- Efficient electrical spin readout of NV- centers in diamond
- Optical activation and detection of charge transport between individual color centers in room-temperature diamond
- Probing metastable space-charge potentials in a wide bandgap semiconductor