Electrical and optical control of single spins integrated in scalable semiconductor devices

Abstract

Spin defects in silicon carbide have exceptional electron spin coherence with a near-infrared spin-photon interface in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we successfully integrate highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricate diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge state control and broad Stark shift tuning exceeding 850 GHz. Surprisingly, we show that charge depletion results in a narrowing of the optical linewidths by over 50 fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while utilizing classical semiconductor devices to control scalable spin-based quantum systems.

20 pages, 5 figures

References in corpus (64)

• Sensing electric fields using single diamond spins
• Heralded entanglement between solid-state qubits separated by 3 meters
• High-fidelity projective readout of a solid-state spin quantum register
• Coherent control of single spins in silicon carbide at room temperature
• Quantum error correction in a solid-state hybrid spin register
• Unconditional quantum teleportation between distant solid-state qubits
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Photo induced ionization dynamics of the nitrogen vacancy defect in diamond investigated by single shot charge state detection
• Properties of nitrogen-vacancy centers in diamond: group theoretic approach
• Charge noise and spin noise in a semiconductor quantum device
• Entanglement-based wavelength multiplexed quantum communication network
• Stark shift control of single optical centers in diamond
• Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride
• Chip-scale nanofabrication of single spins and spin arrays in diamond
• High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
• Engineering shallow spins in diamond with nitrogen delta-doping
• Sub-nanometer resolution in three-dimensional magnetic-resonance imaging of individual dark spins
• Observation of the dynamic Jahn-Teller effect in the excited states of nitrogen-vacancy centers in diamond
• Electrical and optical control of single spins integrated in scalable semiconductor devices
• Electron-phonon processes of the silicon-vacancy centre in diamond
• Probing spin-phonon interactions in silicon carbide with Gaussian acoustics
• Low Temperature Studies of Charge Dynamics of Nitrogen-Vacancy Defect in Diamond
• Efficient readout of a single spin state in diamond via spin-to-charge conversion
• Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures
• Stark Tuning of Single-Photon Emitters in Hexagonal Boron Nitride
• Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
• Optimized quantum sensing with a single electron spin using real-time adaptive measurements
• Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers
• Optical charge state control of spin defects in 4H-SiC
• Decoherence of near-surface nitrogen-vacancy centers due to electric field noise
• Dynamic stabilization of the optical resonances of single nitrogen-vacancy centers in diamond
• Optical coherence of diamond nitrogen-vacancy centers formed by ion implantation and annealing
• Ultrafast spectral diffusion measurement on nitrogen vacancy centers in nanodiamonds using correlation interferometry
• Electrical Tuning of Single Nitrogen-Vacancy Center Optical Transitions Enhanced by Photoinduced Fields
• Robust and accurate electric field sensing with solid state spin ensembles
• Giant Stark effect in the emission of single semiconductor quantum dots
• Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
• Stark effect spectroscopy of mono- and few-layer MoS${}_2$
• Quantum interference of electromechanically stabilized emitters in nanophotonic devices
• Electrically driven spin resonance in silicon carbide color centers
• Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device
• Protecting a diamond quantum memory by charge state control
• Enhanced strain coupling of nitrogen vacancy spins to nanoscale diamond cantilevers
• Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions
• Electrically driven optical interferometry with spins in silicon carbide
• Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide
• Excitation properties of the divacancy in 4H-SiC
• Resonant optical spin initialization and readout of single silicon vacancies in 4H-SiC
• Quantum optics with near lifetime-limited quantum-dot transitions in a nanophotonic waveguide
• Limitations on the indistinguishability of photons from remote solid state sources
• Very Large and Reversible Stark Shift Tuning of Single Emitters in Layered Hexagonal Boron Nitride
• Optical patterning of trapped charge in nitrogen-doped diamond
• Electrometry by optical charge conversion of deep defects in 4H-SiC
• A nanometer-scale optical electrometer
• Electrical control of lifetime-limited quantum emitters using 2D materials
• Size dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charges on spectral diffusion
• Optical switching of defect charge states in 4H-SiC
• Narrow optical linewidths and spin pumping on charge-tunable, close-to-surface self-assembled quantum dots in an ultra-thin diode
• Generation and transport of photoexcited electrons in single-crystal diamond
• Bright single photon sources in lateral silicon carbide light emitting diodes
• Towards a room-temperature spin quantum bus in diamond via optical spin injection, transport and detection
• Large Stark Tuning of InAs/InP Quantum Dots
• Mapping the local spatial charge in defective diamond by means of NV sensors - A "self-diagnostic" concept
• Two-photon interference from two blinking quantum emitters

Cited by in corpus (77)

• Semiconductor Qubits In Practice
• Electrical and optical control of single spins integrated in scalable semiconductor devices
• Integrated quantum photonics with silicon carbide: challenges and prospects
• Entanglement and control of single quantum memories in isotopically engineered silicon carbide
• Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
• Quantum simulations of materials on near-term quantum computers
• Quantum-Coherent Nanoscience
• Single artificial atoms in silicon emitting at telecom wavelengths
• Purcell enhancement of a single silicon carbide color center with coherent spin control
• Optical parametric oscillation in silicon carbide nanophotonics
• Nanoscale electric-field imaging based on a quantum sensor and its charge-state control under ambient condition
• Universal coherence protection in a solid-state spin qubit
• Quantum Embedding Theory for Strongly-correlated States in Materials
• Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
• Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
• Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC
• Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
• Diamond Integrated Quantum Photonics: A Review
• Individually Addressable and Spectrally Programmable Artificial Atoms in Silicon Photonics
• Spectrally reconfigurable quantum emitters enabled by optimized fast modulation
• Purcell enhancement of single-photon emitters in silicon
• Optically Enhanced Electric Field Sensing Using Nitrogen-Vacancy Ensembles
• Probing the coherence of solid-state qubits at avoided crossings
• Optical activation and detection of charge transport between individual color centers in room-temperature diamond
• Tutorial: Remote entanglement protocols for stationary qubits with photonic interfaces
• Narrow optical transitions in erbium-implanted silicon waveguides
• Cavity-coupled telecom atomic source in silicon
• Predicted strong coupling of solid-state spins via a single magnon mode
• Novel color center platforms enabling fundamental scientific discovery
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Waveguide-integrated silicon T centres
• Indistinguishable photons from an artificial atom in silicon photonics
• Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography
• Experimental Generation of Spin-Photon Entanglement in Silicon Carbide
• Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
• Shallow Silicon Vacancy Centers with lifetime-limited optical linewidths in Diamond Nanostructures
• Investigation of the electro-optic effect in high-$Q$ 4H-SiC microresonators
• High quality-factor diamond-confined open microcavity
• Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
• Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
• Electrical Charge Control of h-BN Single Photon Sources
• Donor-Acceptor Pairs in Wide-Bandgap Semiconductors for Quantum Technology Applications
• Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
• Spectral stability of V2 centres in sub-micron 4H-SiC membranes
• Optical repumping of resonantly excited quantum emitters in hexagonal boron nitride
• Plasmonic-enhanced bright single spin defects in silicon carbide membranes
• Aggregating Quantum Networks
• Detection and modeling of hole capture by single point defects under variable electric fields
• Electrically-triggered spin-photon devices in silicon
• Interplay between charge and spin noise in the near-surface theory of decoherence and relaxation of $C_{3v}$ symmetry qutrit spin-1 centers
• Theory of spin center sensing of diffusion
• Suppression of the optical linewidth and spin decoherence of a quantum spin center in a $p$$-$$n$ diode
• Quantum enhanced electric field mapping within semiconductor devices
• Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
• Broadband single-mode planar waveguides in monolithic 4H-SiC
• Relaxation dynamics of spin 3/2 silicon vacancies in 4H-Silicon carbide
• Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering
• Laser-induced spectral diffusion of T centers in silicon nanophotonic devices
• Selective acoustic control of photon-mediated qubit-qubit interactions
• Spectral broadening of a single Er${}^{3+}$ ion in a Si nano-transistor
• Check-probe spectroscopy of lifetime-limited emitters in bulk-grown silicon carbide
• Generalized scaling of spin qubit coherence in over 12,000 host materials
• First-principles computational methods for quantum defects in two-dimensional materials: A perspective
• Scalable registration of single quantum emitters within solid immersion lenses through femtosecond laser writing
• Photoelectrical detection and characterization of divacancy and PL5-PL7 spins in silicon carbide
• Genuine $k$-partite correlations and entanglement in the ground state of the Dicke model for interacting qubits
• A Concise Primer on Solid-State Quantum Emitters
• Hybrid spin-phonon architecture for scalable solid-state quantum nodes
• Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC
• Investigation of the Stark Effect on a Centrosymmetric Quantum Emitter in Diamond
• Photoionization detection of a single Er${}^{3+}$ ion with sub-100-ns time resolution
• Quantum simulation of spin-1/2 XYZ model using solid-state spin centers
• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator
• Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes
• Stability and molecular pathways to the formation of spin defects in silicon carbide
• Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
• Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node