Waveguide-integrated silicon T centres

Abstract

The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spin qubits, and proven native integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we demonstrate further levels of integration by characterizing T centre spin ensembles in single-mode waveguides in SOI. In addition to measuring long spin T_1 times, we report on the integrated centres' optical properties. We find that the narrow homogeneous linewidth of these waveguide-integrated emitters is already sufficiently low to predict the future success of remote spin-entangling protocols with only modest cavity Purcell enhancements. We show that further improvements may still be possible by measuring nearly lifetime-limited homogeneous linewidths in isotopically pure bulk crystals. In each case the measured linewidths are more than an order of magnitude lower than previously reported and further support the view that high-performance, large-scale distributed quantum technologies based upon T centres in silicon may be attainable in the near term.

References in corpus (9)

• Realization of a multi-node quantum network of remote solid-state qubits
• High Quality factor photonic crystal nanobeam cavities
• Subnanosecond spectral diffusion measurement using photon correlation
• A silicon-integrated telecom photon-spin interface
• Macroscopic Polarization Rotation Induced by a Single Spin
• All-silicon light-emitting diodes waveguide-integrated with superconducting single-photon detectors
• Optical properties of an ensemble of G-centers in silicon
• Physical model of continuous two-qubit parity measurement in a cavity-QED network
• Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator

Cited by in corpus (13)

• Cavity-coupled telecom atomic source in silicon
• Cavity enhanced emission from a silicon T center
• High-efficiency single photon emission from a silicon T-center in a nanobeam
• Electrically-triggered spin-photon devices in silicon
• Laser-induced spectral diffusion and excited-state mixing of silicon T centres
• Hopping of the center-of-mass of single G centers in silicon-on-insulator
• Laser-induced spectral diffusion of T centers in silicon nanophotonic devices
• A CN complex as an alternative to the T center in Si
• Silicon T centre hyperfine structure and memory protection schemes
• Multipartite entanglement distribution in a topological photonic network
• Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
• Nonlinear photonic architecture for fault-tolerant quantum computing
• Spin-photon Qubits for Scalable Quantum Network