42 citations · 66 across the 7 of their papers we have counts for
7 papers
Waveguide-integrated silicon T centres
A. DeAbreu, C. Bowness, A. Alizadeh +13
The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and…
Internal mechanical dissipation mechanisms in amorphous silicon
Carl Lévesque, Sjoerd Roorda, François Schiettekatte +1
Using the Activation-Relaxation Technique-nouveau, we search for two-level systems (TLSs) in models of amorphous silicon (a-Si). The TLSs are mechanisms related to internal mechani…
Optical observation of single spins in silicon
A. T. K. Kurkjian, D. B. Higginbottom, C. Chartrand +18
The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter i…
T centres in photonic silicon-on-insulator material
E. R. MacQuarrie, C. Chartrand, D. B. Higginbottom +4
Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon pr…
Lattice vibrations and dynamic disorder in two-dimensional hybrid lead-halide perovskites
Vlad Alexandru Dragomir, Stefanie Neutzner, Claudio Quarti +7
By means of non-resonant Raman spectroscopy and density functional theory calculations, we measure and assign the vibrational spectrum of two distinct two-dimensional lead-iodide p…
Wilson ratio in Yb-substituted CeCoIn5
C. Capan, G. Seyfarth, D. Hurt +4
We have investigated the effect of Yb substitution on the Pauli limited, heavy fermion superconductor, CeCoIn. Yb acts as a non-magnetic divalent substituent for Ce throughout…
Point defects in models of amorphous silicon and their role in structural relaxation
Cristiano L. Dias, Laurent J. Lewis, S. Roorda
We have used tight-binding molecular-dynamics simulations to investigate the role of point defects (vacancies and interstitials) on structural relaxation in amorphous silicon. Our…