Cavity-coupled telecom atomic source in silicon

Abstract

Atomic defects in solid-state materials are promising candidates for quantum interconnect and networking applications. Recently, a series of atomic defects have been identified in the silicon platform, where scalable device integration can be enabled by mature silicon photonics and electronics technologies. In particular, T centers hold great promise due to their telecom band optical transitions and the doublet ground state electronic spin manifold with long coherence times. However, an open challenge for advancing the T center platform is to enhance its weak and slow zero phonon line emission. In this work, we demonstrate the cavity-enhanced fluorescence emission from a single T center. This is realized by integrating single T centers with a low-loss, small mode-volume silicon photonic crystal cavity, which results in an enhancement of the fluorescence decay rate by a factor of $F$ = 6.89. Efficient photon extraction enables the system to achieve an average photon outcoupling rate of 73.3 kHz at the zero phonon line. The dynamics of the coupled system is well modeled by solving the Lindblad master equation. These results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.

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Cited by in corpus (17)

• Optical single-shot readout of spin qubits in silicon
• Genuine and faux single G centers in carbon-implanted silicon
• Electrically-triggered spin-photon devices in silicon
• Bright and Purcell-enhanced single photon emission from a silicon G center
• Entanglement of a nuclear spin qubit register in silicon photonics
• Laser-induced spectral diffusion and excited-state mixing of silicon T centres
• Laser-induced spectral diffusion of T centers in silicon nanophotonic devices
• Hopping of the center-of-mass of single G centers in silicon-on-insulator
• Tracking the creation of single photon emitters in AlN by implantation and annealing
• Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique
• A hybrid source of quantum light for generation of frequency tunable Fock states
• Many-Body Entanglement in Solid-State Emitters
• Spectral stability of cavity-enhanced single-photon emitters in silicon
• Silicon T centre hyperfine structure and memory protection schemes
• Controlled epitaxy of room-temperature quantum emitters in gallium nitride
• Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
• Spin-photon Qubits for Scalable Quantum Network