Single artificial atoms in silicon emitting at telecom wavelengths

Abstract

Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exchange of information have not yet been isolated in such a prevailing semiconductor. Here we show the isolation of single optically-active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission at telecom wavelengths suitable for long-distance propagation in optical fibers. Our results demonstrate that despite its small bandgap (~ 1.1 eV) a priori unfavorable towards such observation, silicon can accommodate point defects optically isolable at single scale, like in wide-bandgap semiconductors. This work opens numerous perspectives for silicon-based quantum technologies, from integrated quantum photonics to quantum communications and metrology.

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• Individually Addressable and Spectrally Programmable Artificial Atoms in Silicon Photonics
• Purcell enhancement of single-photon emitters in silicon
• Identification of a telecom wavelength single photon emitter in silicon
• Narrow optical transitions in erbium-implanted silicon waveguides
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• Cavity enhanced emission from a silicon T center
• Zero-Added-Loss Entangled Photon Multiplexing for Ground- and Space-Based Quantum Networks
• Indistinguishable photons from an artificial atom in silicon photonics
• Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
• Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
• High-efficiency single photon emission from a silicon T-center in a nanobeam
• Optical single-shot readout of spin qubits in silicon
• Spin-mechanics with nitrogen-vacancy centers and trapped particles
• Interplay of the disorder and strain in gallium oxide
• Rational Design of Efficient Defect-Based Quantum Emitters
• Erbium emitters in commercially fabricated nanophotonic silicon waveguides
• Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection
• Purcell enhancement of silicon W centers in circular Bragg grating cavities
• A telecom band single-photon source using a grafted carbon nanotube coupled to a fiber Fabry-Perot cavity in the Purcell regime
• Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
• High finesse microcavities in the optical telecom O-band
• Genuine and faux single G centers in carbon-implanted silicon
• Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation
• Acceptor-induced bulk dielectric loss in superconducting circuits on silicon
• Transition metal impurities in Silicon: Computational search for a semiconductor qubit
• Bright and Purcell-enhanced single photon emission from a silicon G center
• Characterization of the spin and crystal field Hamiltonian of erbium dopants in silicon
• Predicting Solid State Material Platforms for Quantum Technologies
• Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons
• Hopping of the center-of-mass of single G centers in silicon-on-insulator
• Laser-induced spectral diffusion of T centers in silicon nanophotonic devices
• Roadmap on Integrated Quantum Photonics
• Luminescence thermometry based on photon emitters in nanophotonic silicon waveguides
• Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
• Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique
• Material Platforms for Defect Qubits and Single Photon Emitters
• Strain effects in phosphorous bound exciton transitions in silicon
• Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
• Spectral stability of cavity-enhanced single-photon emitters in silicon
• Photoionization detection of a single Er${}^{3+}$ ion with sub-100-ns time resolution
• Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
• Purcell-enhanced lifetime modulation of quantum emitters as a probe of local refractive index changes
• Single G centers in silicon fabricated by co-implantation with carbon and proton
• Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator
• Spin-photon Qubits for Scalable Quantum Network