Silicon nitride waveguides with intrinsic single-photon emitters for integrated quantum photonics

Abstract

The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we develop a novel approach to realize planar waveguides made of low-autofluorescing SiN with intrinsic quantum emitters and demonstrate the single-photon emission coupling into the waveguide mode. The observed emission coupling from these emitters is found to be in line with numerical simulations. The coupling of the single-photon emission to a waveguide mode is confirmed by second-order autocorrelation measurements of light outcoupled off the photonic chip by grating couplers. Fitting the second-order autocorrelation histogram yields $g^{(2)}(0)=0.35\pm 0.12$ without spectral filtering or background correction with an outcoupled photon rate of $10^4$ counts per second. This demonstrates the first successful coupling of photons from intrinsic single-photon emitters in SiN to monolithically integrated waveguides made of the same material. The results of our work pave the way toward the realization of scalable, technology-ready quantum photonic integrated circuitry efficiently interfaced with solid-state quantum emitters.

10 pages, 5 figures

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• Origin of Bright Quantum Emissions with High Debye-Waller factor in Silicon Nitride
• Purcell-enhanced lifetime modulation of quantum emitters as a probe of local refractive index changes