Room-Temperature Quantum Emitter in Aluminum Nitride

Abstract

A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright ($>10^5$ counts per second), pure ($g^{(2)}(0)<0.2$), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor.

References in corpus (9)

• Coherent control of single spins in silicon carbide at room temperature
• Towards optimal single-photon sources from polarized microcavities
• Resonant enhancement of the zero-phonon emission from a color center in a diamond cavity
• Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics
• Dynamical Decoupling of a single electron spin at room temperature
• Electrically and mechanically tunable electron spins in silicon carbide color centers
• Single-photon emitting diode in silicon carbide
• Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
• Second harmonic generation in phase matched aluminum nitride waveguides

Cited by in corpus (13)

• III-Nitride nanophotonics for beyond-octave soliton generation and self-referencing
• Room temperature single-photon emitters in silicon nitride
• Silicon nitride waveguides with intrinsic single-photon emitters for integrated quantum photonics
• On-chip generation and dynamic piezo-optomechanical rotation of single photons
• Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
• Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation
• Electrically pumped h-BN single-photon emission in van der Waals heterostructure
• Polarization study of single color centers in aluminum nitride
• Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
• Photo-dynamics of quantum emitters in aluminum nitride
• Tracking the creation of single photon emitters in AlN by implantation and annealing
• Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens
• Controlled epitaxy of room-temperature quantum emitters in gallium nitride