Single-photon emitting diode in silicon carbide

Abstract

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide (SiC) an ideal material to build such devices. Here, we demonstrate the fabrication of bright single photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of $>$300 kHz), and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single photon source is proposed. These results provide a foundation for the large scale integration of single photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

Main: 10 pages, 6 figures. Supplementary Information: 6 pages, 6 figures

References in corpus (6)

• Coherent control of single spins in silicon carbide at room temperature
• Isolated electron spins in silicon carbide with millisecond-coherence times
• Engineering near infrared single photon emitters in ultrapure silicon carbide
• Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared
• Electrical excitation of silicon-vacancy centers in single crystal diamond
• Quantum-confined single photon emission at room temperature from Silicon carbide tetrapods

Cited by in corpus (56)

• Atomically thin quantum light emitting diodes
• Scalable Quantum Photonics with Single Color Centers in Silicon Carbide
• Bright room temperature single photon source at telecom range in cubic silicon carbide
• Prospects and challenges of quantum emitters in 2D materials
• Strain-tunable entangled-light-emitting diodes with high yield and fast operation speed
• All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
• Optical thermometry based on level anticrossing in silicon carbide
• High-efficiency generation of nanoscale single silicon vacancy defect array in silicon carbide
• Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
• Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
• Entanglement-Based Quantum Information Technology
• Bright and photostable single-photon emitter in silicon carbide
• Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions
• Spin and optical properties of silicon vacancies in silicon carbide (a review)
• Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
• Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology
• Quantum well stabilized point defect spin qubits
• Scalable fabrication of single silicon vacancy defect arrays in silicon carbide using focused ion beam
• Room-Temperature Quantum Emitter in Aluminum Nitride
• Excitation properties of the divacancy in 4H-SiC
• Influence of irradiation on defect spin coherence in silicon carbide
• Vector magnetometry based on S=3/2 electronic spins
• Ultrabright single-photon source on diamond with electrical pumping
• Deterministically Fabricated Solid-State Quantum-Light Sources
• Photophysics of GaN single photon sources in the visible spectral range
• nanoTesla magnetometry with the silicon vacancy in silicon carbide
• Local vibrational modes of Si vacancy spin qubits in SiC
• Bright single photon sources in lateral silicon carbide light emitting diodes
• Robust luminescence of the silicon-vacancy center in diamond at high temperatures
• Dynamics of single-photon emission from electrically pumped color centers
• Polarization dynamics of solid-state quantum emitters
• Phonon sidebands of color centers in hexagonal boron nitride
• Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
• Hyperbolic Metamaterial Resonator-Antenna Scheme for Large, Broadband Emission Enhancement and Single Photon Collection
• Electron nuclear interactions and electronic structure of spin 3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study
• Superinjection in diamond p-i-n diodes: bright single-photon electroluminescence of color centers beyond the doping limit
• Surface Plasmon-Coupled Enhanced Transmission
• Optical properties of MoSe${}_2$ monolayer implanted with ultra-low energy Cr ions
• Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors
• Electrically-triggered spin-photon devices in silicon
• Electrically pumped h-BN single-photon emission in van der Waals heterostructure
• Visible and Near-infrared Microdisk Resonators on a 4H-Silicon-Carbide-on-Insulator Platform
• Fiber-integrated silicon carbide silicon vacancy-based magnetometer
• Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC
• Superinjection of holes in homojunction diodes based on wide-bandgap semiconductors
• Comparative study of quantum emitter fabrication in wide bandgap materials using localized electron irradiation
• Relaxation dynamics of spin 3/2 silicon vacancies in 4H-Silicon carbide
• Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs
• Gate-tunable single-photon electroluminescence of color centers in silicon carbide
• Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators
• Photoionization detection of a single Er${}^{3+}$ ion with sub-100-ns time resolution
• Quantum Photonics Incorporating Color Centers in Silicon Carbide and Diamond
• Temperature anomaly of the V${}_{S}i$ and V${}_C$ vacancy spin coherence time in 4H-SiC
• On-demand generation of shallow silicon vacancy in silicon carbide
• Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide
• Single crystal diamond membranes for nanoelectronics