Optical properties of MoSe monolayer implanted with ultra-low energy Cr ions
arXiv:2304.10992 · doi:10.1021/acsami.3c05366
Abstract
The paper explores the optical properties of an exfoliated MoSe monolayer implanted with Cr ions, accelerated to 25 eV. Photoluminescence of the implanted MoSe reveals an emission line from Cr-related defects that is present only under weak electron doping. Unlike band-to-band transition, the Cr-introduced emission is characterised by non-zero activation energy, long lifetimes, and weak response to the magnetic field. To rationalise the experimental results and get insights into the atomic structure of the defects, we modelled the Cr-ion irradiation process using ab-initio molecular dynamics simulations followed by the electronic structure calculations of the system with defects. The experimental and theoretical results suggest that the recombination of electrons on the acceptors, which could be introduced by the Cr implantation-induced defects, with the valence band holes is the most likely origin of the low energy emission. Our results demonstrate the potential of low-energy ion implantation as a tool to tailor the properties of 2D materials by doping.
References in corpus (25)
- Dilute ferromagnetic semiconductors: Physics and spintronic structures
- Breaking of valley degeneracy by magnetic field in monolayer MoSe2
- Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
- Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
- Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
- Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
- Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
- Irradiation of Nanostrained Monolayer WSe for Site-Controlled Single-Photon Emission up to 150 K
- Efficient implementation of the GW approximation within the all-electron FLAPW method
- Single-photon emitting diode in silicon carbide
- Atomistic defect states as quantum emitters in monolayer MoS
- Control of the Exciton Radiative Lifetime in van der Waals Heterostructures
- Magneto-optics in transition metal diselenide monolayers
- Exciton g-factors of van der Waals heterostructures from first principles calculations
- Giant paramagnetism induced valley polarization of electrons in charge-tunable monolayer MoSe2
- Diffusion quantum Monte Carlo study of excitonic complexes in two-dimensional transition-metal dichalcogenides
- Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations
- Unfolding the band structure of disordered solids: from bound states to high-mobility Kane fermions
- Long valley lifetime of dark excitons in single-layer WSe2
- Ab-initio studies of exciton factors: Monolayer transition metal dichalcogenides in magnetic fields
- Initialization and Readout of Nuclear Spins via negatively charged Silicon-Vacancy Center in Diamond
- Intrinsic Donor-Bound Excitons in Ultraclean Monolayer Semiconductors
- Chlorine doping of MoSe2 flakes by ion implantation
- Interplay of Excitonic Complexes in -Doped WSe Monolayers
- Ensemble spin relaxation of shallow donor qubits in ZnO