9 papers
Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Pujitha Perla, Anton Faustmann, Sebastian Koelling +11
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can…
Fully in-situ InAs nanowire Josephson junctions by selective-area growth and shadow evaporation
Pujitha Perla, H. Aruni Fonseka, Patrick Zellekens +10
Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor el…
Flux periodic oscillations and phase-coherent transport in GeTe nanowire-based devices
Jinzhong Zhang, Pok-Lam Tse, Abdur-Rehman Jalil +9
Despite the fact that GeTe is known to be a very interesting material for applications in thermoelectrics and for phase-change memories, the knowledge on its low-temperature transp…
Hard-gap spectroscopy in a self-defined mesoscopic InAs/Al nanowire Josephson junction
Patrick Zellekens, Russell Deacon, Pujitha Perla +10
Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such…
Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
A. Elbaz, D. Buca, N. Von den Driesch +15
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, s…
Thermally activated diffusion and lattice relaxation in (Si)GeSn materials
Nils von den Driesch, Stephan Wirths, Rene Troitsch +5
Germanium-Tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting and nanoelectronics owing to their direct bandgap and compatibility w…