Atomically thin quantum light emitting diodes

Abstract

Transition metal dichalcogenides (TMDs) are optically active layered materials providing potential for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localised sites in tungsten diselenide (WSe2) and tungsten disulphide (WS2). To achieve this, we fabricate a light emitting diode structure comprising single layer graphene, thin hexagonal boron nitride and TMD mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the TMD family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

References in corpus (20)

• The Quantum Internet
• Two-Dimensional Material Nanophotonics
• Photonic quantum technologies
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
• Coherent control of a single electron spin with electric fields
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• Large-scale quantum-emitter arrays in atomically thin semiconductors
• Fermi polaron-polaritons in charge-tunable atomically thin semiconductors
• Optical properties of atomically thin transition metal dichalcogenides: Observations and puzzles
• Optical response of monolayer, few-layer and bulk tungsten disulfide
• Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, Magneto-optics and Charge tuning
• Mid-infrared Electro-Optic Modulation in Few-layer Black Phosphorus
• Environment-assisted quantum control of a solid-state spin via coherent dark states
• Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides
• Photonic crystals to enhance light extraction from 2D materials
• Frequency stabilization of the zero-phonon line of a quantum dot via phonon-assisted active feedback
• Light extraction from 2D materials using liquid formed micro-lenses
• Identifying optical signatures of momentum-dark excitons in transition metal dichalcogenide monolayers
• Criterion for Single Photon Sources

Cited by in corpus (64)

• Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
• Large-scale quantum-emitter arrays in atomically thin semiconductors
• Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
• Tunable and high purity room-temperature single photon emission from atomic defects in hexagonal boron nitride
• Charge-tuneable biexciton complexes in monolayer WSe${}_2$
• Advances in Space Quantum Communications
• Color centers in hexagonal boron nitride monolayers: A group theory and ab-initio analysis
• Integration of Single Photon Emitters in 2D Layered Materials with a Silicon Nitride Photonic Chip
• Optical properties of atomically thin transition metal dichalcogenides: Observations and puzzles
• Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides
• Localized inter-valley defect excitons as single-photon emitters in WSe${}_2$
• Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
• Quantum Nanophotonics in Two-Dimensional Materials
• Space-compatible cavity-enhanced single-photon generation with hexagonal boron nitride
• Entanglement of single-photons and chiral phonons in atomically thin WSe${}_2$
• Optical response of monolayer, few-layer and bulk tungsten disulfide
• Prospects and challenges of quantum emitters in 2D materials
• Raman spectrum of Janus transition metal dichalcogenide monolayers WSSe and MoSSe
• Mid-infrared Electro-Optic Modulation in Few-layer Black Phosphorus
• Exciton-Photonics: From Fundamental Science to Applications
• Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas
• Spectroscopic size and thickness metrics for liquid-exfoliated h-BN
• Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride
• Atomically-thin Single-photon Sources for Quantum Communication
• Identifying defect-related quantum emitters in monolayer WSe${}_2$
• Room-temperature giant Stark effect of single photon emitter in van der Waals material
• Atomic Localization of Quantum Emitters in Multilayer Hexagonal Boron Nitride
• Photonic crystals to enhance light extraction from 2D materials
• Single Photon Emitters in Boron Nitride: More Than a Supplementary Material
• Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
• Excitonic emission of monolayer semiconductors near-field coupled to high-Q microresonators
• Encapsulated silicon nitride nanobeam cavity for nanophotonics using layered materials
• Giant shift upon strain on the fluorescence spectrum of V${}_{\mathrm{N}}$N${}_{\mathrm{B}}$ color centers in $h$-BN
• Sub-bandgap voltage electroluminescence and magneto-oscillations in a WSe2 light-emitting van der Waals heterostructure
• Origin of nonclassical light emission from defects in multi-layer hexagonal boron nitride
• Spin-defect characteristics of single sulfur vacancies in monolayer ${\text{MoS}}_2$
• Niobium diselenide superconducting photodetectors
• Large Area Automated Characterisation of Chemical Vapour Deposition Grown Monolayer Transition Metal Dichalcogenides Through Photoluminescence Imaging
• Strain-induced bound states in transition-metal dichalcogenide bubbles
• Picosecond energy transfer in a transition metal dichalcogenide-graphene heterostructure revealed by transient Raman spectroscopy
• Imaging dynamic exciton interactions and coupling in transition metal dichalcogenides
• Nonlinear Graphene Quantum Capacitors for Electro-optics
• Monolayer WS${}_2$ electro- and photo-luminescence enhancement by TFSI treatment
• Light extraction from 2D materials using liquid formed micro-lenses
• Excitons and trions in WSSe monolayers
• Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors
• Rapid multiplex ultrafast nonlinear microscopy for material characterization
• Electrically pumped h-BN single-photon emission in van der Waals heterostructure
• Impact of substrates and quantum effects on exciton line shapes of 2D semiconductors at room temperature
• Creation and Microscopic Origins of Single-Photon Emitters in Transition Metal Dichalcogenides and Hexagonal Boron Nitride
• Criterion for Single Photon Sources
• Charge-carrier complexes in monolayer semiconductors
• Valley-exchange coupling probed by angle-resolved photoluminescence
• Large-Scale Statistical Analysis of Defect Emission in hBN: Revealing Spectral Families and Influence of Flakes Morphology
• Origin of selective enhancement of sharp defect emission lines in monolayer WSe${}_2$ on rough metal substrate
• Erbium-implanted WS2 flakes with room-temperature photon emission at telecom wavelengths
• First-principles computational methods for quantum defects in two-dimensional materials: A perspective
• Room-Temperature Quantum-Confined Stark Effect in Atomically Thin Semiconductor
• Optical Thermometry with Quantum Emitters in Hexagonal Boron Nitride
• Perovskite Nanocrystals as Emerging Single-Photon Emitters: Progress, Challenges, and Opportunities
• Electrically driven strain-induced deterministic single-photon emitters in a van der Waals heterostructure
• Single photon sources from two dimensional materials and their interfacing with plasmonic waveguides
• Room temperature single photon emission from oxidized tungsten disulphide multilayers
• Energy dissipation mechanism revealed by spatially resolved Raman thermometry of graphene/hexagonal boron nitride heterostructure devices