Room-temperature giant Stark effect of single photon emitter in van der Waals material
arXiv:1902.07340 · doi:10.1021/acs.nanolett.9b02640
Abstract
Single photon emitters (SPEs) are critical building blocks needed for quantum science and technology. For practical applications, large-scale room-temperature solid-state platforms are required. Color centers in layered hexagonal boron nitride (hBN) have recently been found to be ultra-bright and stable SPEs at room temperature. Yet, to scale up solid-state quantum information processing, large tuning range of single photon energy is demanded for wavelength division multiplexing quantum key distribution, where indistinguishability is not required, and for indistinguishable single-photon production from multi-emitters. Stark effect can tune the single photon energy by an electric field, which however, has been achieved only at cryogenic temperature so far. Here we report the first room-temperature Stark effect of SPEs by exploiting hBN color centers. Surprisingly, we observe a giant Stark shift of single photon more than 30 meV, about one order of magnitude greater than previously reported in color center emitters. Moreover, for the first time, the orientation of the electric permanent dipole moment in the solid-state SPE is determined via angle-resolved Stark effect, revealing the intrinsic broken symmetries at such a color center. The remarkable Stark shift discovered here and the significant advance in understanding its atomic structure pave a way towards the scalable solid-state on-chip quantum communication and computation at room temperature.
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- Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride
- Polarization and localization of single-photon emitters in hexagonal boron nitride wrinkles
- Lifetime Limited and Tunable Quantum Light Emission in h-BN via Electric Field Modulation
- Vibrational signatures for the identification of single-photon emitters in hexagonal boron nitride
- Organic molecules as origin of visible-range single photon emission from hexagonal boron nitride and mica
- Resonant and phonon-assisted ultrafast coherent control of a single hBN color center
- Electrically pumped h-BN single-photon emission in van der Waals heterostructure
- Single-photon source over the terahertz regime
- High-speed quantum transducer with a single-photon emitter in a 2D resonator
- Photon statistics analysis of h-BN quantum emitters with pulsed and continuous-wave excitation
- Deterministic coupling of a quantum emitter to surface plasmon polaritons, Purcell enhanced generation of indistinguishable single photons and quantum information processing
- Temperature-dependent energy-level shifts of Spin Defects in hexagonal Boron Nitride
- Current-induced brightening of vacancy-related emitters in hexagonal boron nitride
- First-principles computational methods for quantum defects in two-dimensional materials: A perspective
- Photo-Physical Characteristics of Boron Vacancy-Derived Defect Centers in Hexagonal Boron Nitride
- Engineering spin defects in hexagonal boron nitride
- Mechanisms and Opportunities for Tunable High-Purity Single Photon Emitters: A Review of Hybrid Perovskites and Prospects for Bright Squeezed Vacuum
- Surface defects in carbon-doped hexagonal boron nitride for negative-contrast direct laser writing