Electroluminescence in Single Layer MoS2

Abstract

We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.

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Cited by in corpus (127)

• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Bandgap Engineering of Strained Monolayer and Bilayer MoS2
• Atomically thin p-n junctions with van der Waals heterointerfaces
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• Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
• Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide
• Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping
• Solar-energy conversion and light emission in an atomic monolayer p-n diode
• Strong light-matter coupling in two-dimensional atomic crystals
• Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
• High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects
• Black phosphorus: narrow gap, wide applications
• Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
• Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
• Ultrafast Dynamics of Defect-Assisted Electron-Hole Recombination in Monolayer MoS2
• Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
• Mono- and Bilayer WS2 Light-Emitting Transistors
• Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
• Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2
• Valley dynamics probed through charged and neutral exciton emission in monolayer WSe2
• Carrier and polarization dynamics in monolayer MoS2
• Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2
• Exciton-exciton annihilation in MoSe2 monolayers
• Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide
• Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction
• Atomically thin p-n junctions based on two-dimensional materials
• Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
• WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature
• Low Frequency Electronic Noise in Single-Layer MoS2 Transistors
• Nonlinear Photoluminescence in Atomically Thin Layered WSe2 Arising from Diffusion-Assisted Exciton-Exciton Annihilation
• Ultra-strong nonlinear optical processes and trigonal warping in MoS${}_2$ layers
• Vibrational and optical properties of MoS${}_2$: from monolayer to bulk
• Optical properties of atomically thin transition metal dichalcogenides: Observations and puzzles
• Single-layer MoS2 mechanical resonators
• Large Area Single Crystal (0001) Oriented MoS2 Thin Films
• Elucidating the photoresponse of ultrathin MoS2 field-effect transistors by scanning photocurrent microscopy
• Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides
• Surface Recombination Limited Lifetimes of Photoexcited Carriers in Few-Layer Transition Metal Dichalcogenide MoS2
• Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors
• Reduced dielectric screening and enhanced energy transfer in single and few-layer MoS2
• Ultrafast Response of Monolayer Molybdenum Disulfide (MoS2) Photodetectors
• Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers
• Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates
• Nanophotonics with 2D Transition Metal Dichalcogenides
• Electric field induced strong enhancement of electroluminescence in multi-Layer MoS2
• Electrostatically Induced Superconductivity at the Surface of WS${}_2$
• Capture the growth kinetics of CVD growth of two-dimensional MoS2
• Control of Two-Dimensional Excitonic Light Emission via Photonic Crystal
• Exciton-plasmon Coupling and Electromagnetically Induced Transparency in Monolayer Semiconductors Hybridized with Ag Nanoparticles
• Theory of second harmonic generation in few-layered MoS2
• Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide
• Temperature Dependent Valley Relaxation Dynamics in Single Layer WS2 Measured Using Ultrafast Spectroscopy
• Graphdiyne-metal contacts and graphdiyne transistors
• Mid-infrared polarized emission from black phosphorus light-emitting diodes
• Exciton-related electroluminescence from monolayer MoS2
• The Optical Properties and Plasmonics of Anisotropic 2-Dimensional Materials
• Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer
• Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS${}_2$ Heterostructures
• Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction
• Growth and electronic structure of epitaxial single-layer WS${}_2$ on Au(111)
• Fast Exciton Annihilation by Capture of Electrons or Holes by Defects via Auger Scattering in Monolayer Metal Dichalcogenides
• Folded MoS2 layers with reduced interlayer coupling
• Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS2
• Exciton Trapping Is Responsible for the Long Apparent Lifetime in Acid-Treated MoS2
• Suppressing Diffusion-Mediated Exciton Annihilation in 2D Semiconductors Using the Dielectric Environment
• Multi-Valley Superconductivity In Ion-Gated MoS2 Layers
• Room-temperature giant Stark effect of single photon emitter in van der Waals material
• Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides
• Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors
• Enhanced Raman and photoluminescence response in monolayer MoS${}_2$ due to laser healing of defects
• Intense femtosecond photoexcitation of bulk and monolayer MoS2
• Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1
• Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities
• Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
• Boosting quantum yields in 2D semiconductors via proximal metal plates
• Thermal light emission from monolayer MoS2
• High open-circuit voltage in transition metal dichalcogenide solar cells
• Electrical control of lifetime-limited quantum emitters using 2D materials
• Valley Acoustoelectric Effect
• Distinctive signatures of the spin- and momentum-forbidden dark exciton states in the photo-luminescences of strained WSe${}_2$ monolayers under thermalization
• Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals
• Scalable Fabrication of Atomically Thin Monolayer MoS2 Photodetectors
• Blue shifting of the A exciton peak in folded monolayer 1H-MoS2
• Strongly Tunable Anisotropic Thermal Transport in MoS2 by Strain and Lithium Intercalation: First--Principles Calculations
• Unique excitonic effects in tungsten disulphide monolayers on two-layer graphene
• Performance analysis of photodetectors based on 2D materials and heterostructures
• Exciton formation assisted by longitudinal optical phonons in monolayer transition metal dichalcogenides
• Radiative lifetime of localized excitons in transition metal dichalcogenides
• Centered honeycomb NiSe2 nanoribbons, structure and electronic properties
• Fundamental exciton linewidth broadening in monolayer transition metal dichalcogenides
• Modulation of trion and exciton formation in monolayer WS2 by dielectric and substrate engineering
• Infrared to terahertz optical conductivity of $n$-type and $p$-type monolayer MoS${}_2$ in the presence of Rashba spin-orbit coupling
• Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping
• Visualization of defect-induced excitonic properties of the edges and grain boundaries in synthesized monolayer molybdenum disulfide
• Spectral focusing of broadband silver electroluminescence in nanoscopic FRET-LEDs
• Acoustoelectric effect in two-dimensional Dirac materials exposed to Rayleigh surface acoustic waves
• Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature
• Intra-Domain Periodic Defects in Monolayer MoS${}_2$
• Monolayer WS${}_2$ electro- and photo-luminescence enhancement by TFSI treatment
• Photoluminescence Saturation and Exciton Decay Dynamics in Transition Metal Dichalcogenide Monolayers
• DFT+U Investigation of magnetocrystalline anisotropy of Mn-doped transition-metal dichalcogenides monolayers
• Optical absorption in disordered monolayer molybdenum disulfide
• Electronic Properties of Defective MoS${}_2$ Monolayers Subject to Mechanical Deformations: A First-Principles Approach
• Photodetection in p-n junctions formed by electrolyte-gated transistors of two-dimensional crystals
• Radiative and Non-Radiative Exciton Energy Transfer in Monolayers of Two-Dimensional Transition Metal Dichalcogenides
• Scalable Transfer-Free Fabrication of MoS${}_2$/SiO${}_2$ Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000
• Band-offset-induced lateral shift of valley electrons in ferromagnetic MoS${}_2$/WS${}_2$ planar heterojunctions
• Indirect-to-direct band gap crossover of single walled MoS${}_2$ nanotubes
• Photoinduced valley-polarized current of layered MoS2 by electric tuning
• ${\sigma }_h$ symmetry and electron-phonon interaction in two-dimensional crystalline systems
• Radiation-hardened and Repairable MoS${}_2$ Field Effect Devices with Polymer Solid Electrolyte Gates
• On the importance of electron-electron and electron-phonon scatterings and energy renormalizations during carrier relaxation in monolayer transition-metal dichalcogenides
• Quantum Anomalous Valley Hall Effect for Bosons
• Dependence of the magnetic interactions in MoS${}_2$ monolayer on Mn-doping configurations
• Tightly-bound and room-temperature-stable excitons in van der Waals degenerate-semiconductor Bi4O4SeCl2 with high charge-carrier density
• Unconventional pairing in Ising superconductors: Application to monolayer NbSe${}_2$
• Experimentally constrained multidimensional simulation of laser-generated plasmas and its application to UV nanosecond ablation of Se and Te
• Low-Temperature Annihilation Rate for Quasi-Localized Excitons in Monolayer MoS2
• Coherent electron dynamics in monolayer ${\text{MoS}}_2$ under ultrashort optical pulse
• Room-Temperature Quantum-Confined Stark Effect in Atomically Thin Semiconductor
• Electron density control in tungsten diselenide monolayers via photochlorination
• Selectively strong coupling MoS${}_2$ excitons to a metamaterial at room temperature
• Optical response of WSe${}_2$-based vertical tunneling junction
• Defect Passivation and Förster-Type Energy Exchange in H2Pc-TMD Organic-Inorganic Heterostructures
• An Atomistic-based Finite Deformation Continuum Membrane Model for Monolayer Transition Metal Dichalcogenides