DFT+U Investigation of magnetocrystalline anisotropy of Mn-doped transition-metal dichalcogenides monolayers

Abstract

Doped transition-metal dichalcogenides monolayers exhibit exciting magnetic properties for the benefit of two-dimensional spintronic devices. Using density functional theory (DFT) incorporating Hubbard-type of correction (DFT$+U$) to account for the electronic correlation, we study the magnetocrystalline anisotropy energy (MAE) characterizing Mn-doped MS${}_2$ (M=Mo, W) monolayers. A single isolated Mn dopant exhibits a large perpendicular magnetic anisotropy of 35 meV (8 meV) in the case of Mn-doped WS${}_2$ (MoS${}_2$) monolayer. This value originates from the Mn in-plane orbitals degeneracy lifting due to the spin-orbit coupling. In pairwise doping, the magnetization easy axis changes to the in-plane direction with a weak MAE compared to single Mn doping. Our results suggest that diluted Mn-doped MS${}_2$ monolayers, where the Mn dopants are well separated, could potentially be a candidate for the realization of ultimate nanomagnet units.

References in corpus (5)

• Exciton Binding Energy of Monolayer WS2
• Surface Magnetoelectric Effect in Ferromagnetic Metal Films
• Probing the influence of dielectric environment on excitons in monolayer WSe2: Insight from high magnetic fields
• Zero-point spin-fluctuations of single adatoms
• Room-temperature superparamagnetism due to giant magnetic anisotropy in Mo${}_S$ defected single-layer MoS${}_2$

Cited by in corpus (1)

• Transferable mechanism of perpendicular magnetic anisotropy switching by hole doping in V$X_2$ ($X$=Te, Se, S) monolayers