Polarity Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons

Abstract

Using first-principles calculations and deformation potential theory, we investigate the intrinsic carrier mobility (μ) of monolayer MoS2 sheet and nanoribbons. In contrast to the dramatic three orders of magnitude of deterioration of μ in graphene upon forming nanoribbons, the magnitude of μ in armchair MoS2 nanoribbons is comparable to that in monolayer MoS2 sheet, albeit oscillating with width. Surprisingly, a room-temperature transport polarity reversal is observed with μ of hole (h) and electron (e) being 200.52 (h) and 72.16 (e) cm2V-1s-1 in sheet, and 49.72 (h) and 190.89 (e) cm2V-1s-1 in 4 nm-wide nanoribbon. The robust magnitudes of μ and polarity reversal are attributable to the different characteristics of edge states inherent in MoS2 nanoribbons. Our study suggests that width-reduction together with edge engineering provide a promising route for improving the transport properties of MoS2 nanostructures.

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