MoS2 Nanoribbon Transistors: Transition from Depletion-mode to Enhancement-mode by Channel Width Trimming

Abstract

We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 μm down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2 nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a strong positive threshold voltage (VT) shift with narrow channel widths of less than 200 nm. Our results also show that transistors with thinner channel thicknesses have larger VT shifts associated with width scaling. Devices fabricated on a 6 nm thick MoS2 crystal underwent the transition from depletion-mode to enhancement-mode.

arXiv comment3 pages, 3 figures, to appear in IEEE Electron Device Letters

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Cited by in corpus (14)

• Polarity Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons
• Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
• Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide
• Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate
• Unusual Scaling Laws of the Band Gap and Optical Absorption of Phosphorene Nanoribbons
• Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
• Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
• Tuning the Threshold Voltage of MoS2 Field-Effect Transistors via Surface Treatment
• Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors
• Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors
• Single layer MoS2 nanoribbon field effect transistor
• Scalable Fabrication of Atomically Thin Monolayer MoS2 Photodetectors
• Edge-induced Schottky barrier modulation at metal contacts to exfoliated molybdenum disulfide flakes
• Scaling Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides