Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Abstract

Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect transistors. Over 100 devices are studied to obtain a statistical description of device performance in CVD MoS2. We examine and scale down the channel length of the transistors to 100 nm and achieve record high drain current of 62.5 mA/mm in CVD monolayer MoS2 film ever reported. We further extract the intrinsic contact resistance of low work function metal Ti on monolayer CVD MoS2 with an expectation value of 175 Ω.mm, which can be significantly decreased to 10 Ω.mm by appropriate gating. Finally, field-effect mobilities (μFE) of the carriers at various channel lengths are obtained. By taking the impact of contact resistance into account, an average and maximum intrinsic μFE is estimated to be 13.0 and 21.6 cm2/Vs in monolayer CVD MoS2 films, respectively.

References in corpus (12)

• Two Dimensional Atomic Crystals
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers
• High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Channel Length Scaling of MoS2 MOSFETs
• Large and tunable photo-thermoelectric effect in single-layer MoS2
• Measurement of mobility in dual-gated MoS2 transistors
• Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential
• The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition
• MoS2 Nanoribbon Transistors: Transition from Depletion-mode to Enhancement-mode by Channel Width Trimming

Cited by in corpus (21)

• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
• Polarity Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons
• Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
• Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
• Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
• Transport properties of monolayer MoS${}_2$ grown by chemical vapour deposition
• Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
• Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling
• Field-Effect Transistors Based on Few-Layered alpha-MoTe_2
• Two-dimensional Quasi-Freestanding Molecular Crystals for High-Performance Organic Field-Effect Transistors
• Chemical assembly of atomically thin transistors and circuits in a large scale
• Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
• Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
• Immunity to Scaling in MoS2 Transistors Using Edge Contacts
• Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors
• An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution
• Unveiling Defect-Mediated Carrier Dynamics in Monolayer Semiconductors by Spatiotemporal Microwave Imaging
• GW band structure of monolayer MoS2 using the SternheimerGW method and effect of dielectric environment
• Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition
• Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride