6.5k citations · 20k across the 70 of their papers we have counts for
71 papers
Phase-field Simulations of Polarization Variations in Polycrystalline Hf0.5Zr0.5O2 based MFIM: Voltage-Dependence and Dynamics
Revanth Koduru, Imtiaz Ahmed, Atanu K Saha +3
In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We conside…
A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current
Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao +12
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process.…
A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current
Zehao Lin, Mengwei Si, Vahid Askarpour +12
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio freque…
Scaled indium oxide transistors fabricated using atomic layer deposition
Mengwei Si, Zehao Lin, Zhizhong Chen +3
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scalin…
Tunable Chirality-dependent Nonlinear Electrical Responses in 2D Tellurium
Chang Niu, Gang Qiu, Yixiu Wang +6
Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by solution-based method shows excellent electric…
Ionic control over ferroelectricity in 2D layered van der Waals capacitors
Sabine M. Neumayer, Mengwei Si, Junkang Li +7
The van der Waals layered material CuInP2S6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against th…