59 citations · 71 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2005★ 12 cited
Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
K. Lai, P. D. Ye, W. Pan +4
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) AlO as the gate dielectric are fabricated on the Si/SiGe hetero…
cond-mat.str-el2004★ 59 cited
Evidence for Two Different Solid Phases of Two Dimensional Electrons in High Magnetic Fields
Yong P. Chen, R. M. Lewis, L. W. Engel +5
We have performed RF spectroscopy on very high quality two dimensional electron systems in the high magnetic field insulating phase, usually associated with a Wigner solid (WS) pin…