222 citations · 388 across the 4 of their papers we have counts for
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Magneto-conductance Oscillations in Graphene Antidot Arrays
T. Shen, Y. Q. Wu, M. A. Capano +3
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been f…
Top-gated graphene field-effect-transistors formed by decomposition of SiC
Y. Q. Wu, P. D. Ye, M. A. Capano +4
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 i…
Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
K. Lai, P. D. Ye, W. Pan +4
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) AlO as the gate dielectric are fabricated on the Si/SiGe hetero…
AC Magnetotransport in Reentrant Insulating Phases of Two-dimensional Electrons near 1/5 and 1/3 Landau fillings
Yong P. Chen, Z. H. Wang, R. M. Lewis +5
We have measured high frequency magnetotransport of a high quality two-dimensional electron system (2DES) near the reentrant insulating phase (RIP) at Landau fillings () between…
Evidence of a first order phase transition between Wigner crystal and Bubble Phases of 2D electrons in higher Landau levels
R. M. Lewis, Yong Chen, L. W. Engel +4
For filling factors in the range between 4.16 and 4.28, we simultaneously detect {\it two} resonances in the real diagonal microwave conductivity of a two--dimensional electron…