Top-gated graphene field-effect-transistors formed by decomposition of SiC

Abstract

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple graphene layers on top of the SiC substrates. The observation of n-type and p-type transition further verifies Dirac Fermions unique transport properties in graphene layers. The measured electron and hole mobility on these fabricated graphene FETs are as high as 5400 cm2/Vs and 4400 cm2/Vs respectively, which are much larger than the corresponding values from conventional SiC or silicon.

References in corpus (8)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy Band Gap Engineering of Graphene Nanoribbons
• A Graphene Field-Effect Device
• Transport measurements across a tunable potential barrier in graphene
• Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
• Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC
• Effect of disorder on a graphene p-n junction

Cited by in corpus (8)

• Production, properties and potential of graphene
• Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons
• Screening and interlayer coupling in multilayer graphene field-effect transistors
• Non-volatile switching in graphene field effect devices
• Charge transfer between epitaxial graphene and silicon carbide
• Modeling edge effects in Graphene Nanoribbon Field-effect Transistors with real and mode space methods
• Magneto-conductance Oscillations in Graphene Antidot Arrays
• Mimicking Nanoribbon Behavior Using a Graphene Layer on SiC