1.3k citations · 3.2k across the 12 of their papers we have counts for
12 papers
How to Report and Benchmark Emerging Field-Effect Transistors
Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang +13
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device per…
Ni Foam Assisted Synthesis of High Quality Hexagonal Boron Nitride with Large Domain Size and Controllable Thickness
Hao Ying, Xiuting Li, Deshuai Li +8
The scalable synthesis of two-dimensional (2D) hexagonal boron nitride (h-BN) is of great interest for its numerous applications in novel electronic devices. Highly-crystalline h-B…
Semi-analytical model of the contact resistance in two-dimensional semiconductors
Roberto Grassi, Yanqing Wu, Steven J. Koester +1
Contact resistance is a severe performance bottleneck for electronic devices based on two-dimensional layered (2D) semiconductors, whose contacts are Schottky rather than Ohmic. Al…
Mid-infrared plasmons in scaled graphene nanostructures
Hugen Yan, Tony Low, Wenjuan Zhu +6
Plasmonics takes advantage of the collective response of electrons to electromagnetic waves, enabling dramatic scaling of optical devices beyond the diffraction limit. Here, we dem…
High-frequency performance of scaled carbon nanotube array field-effect transistors
Mathias Steiner, Michael Engel, Yu-Ming Lin +10
We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanot…
Quantum behavior of graphene transistors near the scaling limit
Yanqing Wu, Vasili Perebeinos, Yu-ming Lin +3
The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as esse…