Top-gated graphene field-effect-transistors formed by decomposition of SiC

Abstract

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple graphene layers on top of the SiC substrates. The observation of n-type and p-type transition further verifies Dirac Fermions unique transport properties in graphene layers. The measured electron and hole mobility on these fabricated graphene FETs are as high as 5400 cm2/Vs and 4400 cm2/Vs respectively, which are much larger than the corresponding values from conventional SiC or silicon.

References in corpus (9)

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• Energy Band Gap Engineering of Graphene Nanoribbons
• A Graphene Field-Effect Device
• Transport measurements across a tunable potential barrier in graphene
• Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
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• Effect of disorder on a graphene p-n junction

Cited by in corpus (25)

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• Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons
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• Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
• Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide
• Non-volatile switching in graphene field effect devices
• Charge transfer between epitaxial graphene and silicon carbide
• Modeling edge effects in Graphene Nanoribbon Field-effect Transistors with real and mode space methods
• Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
• Magneto-conductance Oscillations in Graphene Antidot Arrays
• Approaching magnetic ordering in graphene materials by FeCl${}_3$ intercalation
• Quantitatively Enhanced Reliability and Uniformity of High-κ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers
• Capacitance of graphene nanoribbons
• Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies
• Top and side gated epitaxial graphene field effect transistors
• Opening and reversible control of a wide energy gap in uniform monolayer graphene
• A transverse current rectification in graphene superlattice
• Hot carriers in an intrinsic graphene
• Model and performance evaluation of field-effect transistors based on epitaxial graphene on SiC
• Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)
• Inelastic Phonon Scattering in Graphene FETs
• Mimicking Nanoribbon Behavior Using a Graphene Layer on SiC
• The mutual rectification effect of electric currents induced by electromagnetic waves in materials with non-additive energy spectrum: the quantum kinetic equation approach
• Laser Exfoliation of Graphene from Graphite
• Finger-gate manipulated quantum transport in Dirac materials