Magneto-conductance Oscillations in Graphene Antidot Arrays
arXiv:0807.1554 · doi:10.1063/1.2988725
Abstract
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these graphene films. At low temperatures, magneto-conductance in these films exhibits pronounced Aharonov-Bohm oscillations with the period corresponding to magnetic flux quanta added to the area of a single antidot. At low fields, weak localization is observed and its visibility is enhanced by intravalley scattering on antidot edges. At high fields, we observe two distinctive minima in magnetoconductance which can be attributed to commensurability oscillations between classical cyclotron orbits and antidot array. All mesoscopic features, surviving up to 70 K, reveal the unique electronic properties of graphene.
5 pages, 3 figures
References in corpus (9)
- Electric Field Effect in Atomically Thin Carbon Films
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Graphene Antidot Lattices - Designed Defects and Spin Qubits
- Weak localisation in graphene flakes
- Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene
- Aharonov-Bohm effect in graphene
- Top-gated graphene field-effect-transistors formed by decomposition of SiC
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