Electronic properties of graphene antidot lattices

Abstract

Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes which causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three numerical approaches with different levels of computational complexity, efficiency, and accuracy. Fast finite-element solutions of the Dirac equation capture qualitative features of the band structure, while full tight-binding calculations and density functional theory are necessary for more reliable predictions of the band structure. We compare the three computational approaches and investigate the role of hydrogen passivation within our density functional theory scheme.

arXiv comment19 pages, 10 figures, 1 table, final version of invited paper to focus issue on graphene in New Journal of Physics

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Cited by in corpus (48)

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• Graphene antidot lattice waveguides
• Electronic Structures of Porous Nanocarbons
• Patched Green's function techniques for two dimensional systems: Electronic behaviour of bubbles and perforations in graphene
• Hyperfine interactions in two-dimensional HgTe topological insulators
• Tunable resonances due to vacancies in graphene nanoribbons
• Generic helical edge states due to Rashba spin-orbit coupling in a topological insulator
• Polaronic signatures and spectral properties of graphene antidot lattices
• Atomic carbon chains as spin-transmitters: an \textit{Ab initio} transport study
• Electron-phonon coupling in graphene antidot lattices: an indication of polaronic behavior
• Band gaps in graphene via periodic electrostatic gating
• Electronic and optical properties of graphene antidot lattices: Comparison of Dirac and tight-binding models
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• Dirac model of electronic transport in graphene antidot barriers
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• Transport in graphene antidot barriers and tunneling devices
• Confined Electrons in Effective Plane Fractals
• Screening and Collective Modes in Disordered Graphene Antidot Lattices
• Screening in graphene antidot lattices
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• Optical Conductivity Signatures of Floquet Electronic Phases
• Magnetotransport study of the mini-Dirac cone in AB-stacked four- to six-layer graphene under perpendicular electric field
• Modification of the Optical Properties of Molecular Chains upon Coupling to Adatoms
• Thermoelectric Properties of Electrostatically Tunable Antidot Lattices
• Predicting edge-localized monovacancy defects in zigzag graphene nanoribbons from Floquet quasienergy spectrum
• Dimensional crossover and enhanced thermoelectric efficiency due to broken symmetry in graphene antidot lattices
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