Electronic properties of graphene antidot lattices
arXiv:0907.0122 · doi:10.1088/1367-2630/11/9/095020
Abstract
Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes which causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three numerical approaches with different levels of computational complexity, efficiency, and accuracy. Fast finite-element solutions of the Dirac equation capture qualitative features of the band structure, while full tight-binding calculations and density functional theory are necessary for more reliable predictions of the band structure. We compare the three computational approaches and investigate the role of hydrogen passivation within our density functional theory scheme.
19 pages, 10 figures, 1 table, final version of invited paper to focus issue on graphene in New Journal of Physics
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- Tunable resonances due to vacancies in graphene nanoribbons
- Polaronic signatures and spectral properties of graphene antidot lattices
- Band gaps in graphene via periodic electrostatic gating
- Electronic and optical properties of graphene antidot lattices: Comparison of Dirac and tight-binding models
- Dual-probe spectroscopic fingerprints of defects in graphene
- Dirac model of electronic transport in graphene antidot barriers
- Moiré effects in graphene--hBN heterostructures
- Boron and nitrogen doping in graphene antidot lattices
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- A DFT study on the electronic and magnetic properties of triangular graphene antidot lattices
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- Thermoelectric properties of disordered graphene antidot devices
- Gas adsorption effects on electronic and magnetic properties of triangular graphene antidot lattices