Weak Localization and Transport Gap in Graphene Antidot Lattices
arXiv:0901.0840 · doi:10.1088/1367-2630/11/9/095021
Abstract
We fabricated and measured antidot lattices in single layer graphene with lattice periods down to 90 nm. In large-period lattices, a well-defined quantum Hall effect is observed. Going to smaller antidot spacings the quantum Hall effect gradually disappears, following a geometric size effect. Lattices with narrow constrictions between the antidots behave as networks of nanoribbons, showing a high-resistance state and a transport gap of a few mV around the Dirac point. We observe pronounced weak localization in the magnetoresistance, indicating strong intervalley scattering at the antidot edges. The area of phase-coherent paths is bounded by the unit cell size at low temperatures, so each unit cell of the lattice acts as a ballistic cavity.
some revisions, to appear in New Journal of Physics, Special Issue Graphene
References in corpus (16)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Making graphene visible
- Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
- Quantum Transport in Semiconductor Nanostructures
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Graphene Antidot Lattices - Designed Defects and Spin Qubits
- Weak localisation in graphene flakes
- Conductance quantization and transport gap in disordered graphene nanoribbons
- Weak-Localization and Integrability in Ballistic Cavities
- Symmetry Classes in Graphene Quantum Dots: Universal Spectral Statistics, Weak Localization, and Conductance Fluctuations
- Magneto-conductance Oscillations in Graphene Antidot Arrays
- Quantum transport thermometry for electrons in graphene
Cited by in corpus (55)
- Robustness of edge states in graphene quantum dots
- Electronic properties of graphene antidot lattices
- Thermoelectric properties of finite graphene antidot lattices
- Molecular Assembly on Two-Dimensional Materials
- Imaging ellipsometry of graphene
- Linear Scaling Quantum Transport Methodologies
- High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants
- Symmetry-induced gap opening in graphene superlattices
- Ballistic transport in graphene antidot lattices
- Prediction of C7N6 and C9N4: Stable and strong porous carbon-nitride nanosheets with attractive electronic and optical properties
- Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping
- Nanoporous graphene: a 2D semiconductor with anisotropic mechanical, optical and thermal conduction properties
- Magnetoconductance of the Corbino disk in graphene
- Rippled Graphene in an In-Plane Magnetic Field: Effects of a Random Vector Potential
- Edge effects in graphene nanostructures: I. From multiple reflection expansion to density of states
- Optical excitations and thermoelectric properties of 2D holey graphene
- Silicene Nanomesh
- Gate-tunable two-dimensional superlattices in graphene
- Electronic Properties of Disordered Graphene Antidot Lattices
- Electronic transport in disordered graphene antidot lattice devices
- Graphene antidot lattice waveguides
- Patched Green's function techniques for two dimensional systems: Electronic behaviour of bubbles and perforations in graphene
- Phase Coherent Transport in Graphene Nanoribbons and Graphene Nanoribbon Arrays
- Weak localization and Raman study of anisotropically etched graphene antidots
- Hofstadter butterflies and magnetically induced band gap quenching in graphene antidot lattices
- Electron trajectories and magnetotransport in nanopatterned graphene under commensurability conditions
- Edge effects in graphene nanostructures: II. Semiclassical theory of spectral fluctuations and quantum transport
- Tuning electronic structure of graphene via tailoring structure: theoretical study
- Electronic and optical properties of graphene antidot lattices: Comparison of Dirac and tight-binding models
- Graphene on graphene antidot lattices: Electronic and transport properties
- Dirac model of electronic transport in graphene antidot barriers
- Magneto-Transport Properties of Exfoliated Graphene on GaAs
- Electronic properties of a graphene antidot in magnetic fields
- Transport in graphene antidot barriers and tunneling devices
- Confined Electrons in Effective Plane Fractals
- Superballistic conduction in hydrodynamic antidot graphene superlattices
- Electronic and transport properties in geometrically disordered graphene antidot lattices
- Screening and Collective Modes in Disordered Graphene Antidot Lattices
- Solving the graphene electronics conundrum: high mobility and high on-off ratio in graphene nanopatterned transistors
- Screening in graphene antidot lattices
- Robust band gap and half-metallicity in graphene with triangular perforations
- Isolated and hybrid bilayer graphene rings
- Boron and nitrogen doping in graphene antidot lattices
- Velocity renormalization and Dirac cone multiplication in graphene superlattices with various barrier edge geometries
- Quantum corrections to transport in graphene: a trajectory-based semiclassical analysis
- Monitoring Mechanical Motion of Carbon Nanotube based Nanomotor by Optical Absorption Spectrum
- Nanoscale view of engineered massive Dirac quasiparticles in lithographic superstructures
- Master equation based steady-state cluster perturbation theory
- Plasmon-mediated Coulomb drag between graphene waveguides
- Designing single and degenerate flat bands in the kagome lattice with long-range hopping
- Magnetotransport study of the mini-Dirac cone in AB-stacked four- to six-layer graphene under perpendicular electric field
- Quantum Corrections to Thermopower and Conductivity in Graphene
- Engineering two-dimensional kagome topological insulator from porous graphene
- Crystallogprahically selective nanopatterning of graphene on SiO2
- Thermoelectric properties of disordered graphene antidot devices