Silicene Nanomesh

Abstract

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.

References in corpus (13)

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• Graphene Antidot Lattices - Designed Defects and Spin Qubits
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• Character of electronic states in graphene antidot lattices: Flat bands and spatial localization
• Proof-of-Concept of Real-World Quantum Key Distribution with Quantum Frames

Cited by in corpus (7)

• Highly Sensitive Gas Sensors Based on Silicene Nanoribbons
• Properties of BSi${}_6$N monolayers derived by first-principle computation
• Band-gap switching and scaling of nanoperforated graphene
• Effects of parallel electric and magnetic fields on Rydberg excitons in buckled two-dimensional materials
• Stacking-configuration-enriched essential properties in bilayer silicenes
• Robust Ferromagnetism in Silicene Nanoflakes through Patterned Hydrogenation
• Electric field tunable magnetoexcitons in Xenes-hBN-TMDC, Xenes-hBN-BP, and Xenes-hBN-TMTC heterostructures