124 citations · 402 across the 12 of their papers we have counts for
12 papers
The mechanism of Li deposition on the Cu substrates in the anode-free Li metal batteries
Genming Lai, Junyu Jiao, Chi Fang +4
Due to the rapid growth in the demand for high-energy-density Li batteries and insufficient global Li reserves, the anode-free Li metal batteries are receiving increasing attention…
Self-healing mechanism of lithium in lithium metal batteries
Junyu Jiao, Genming Lai, Liang Zhao +9
Li metal is an ideal anode material for use in state-of-the-art secondary batteries. However, Li-dendrite growth is a safety concern and results in low coulombic efficiency, which…
Insight into the origin of Lithium/Nickel ions exchange in layered Li(NixMnyCoz)O2 cathode materials
Yinguo Xiao, Tongchao Liu, Jiajie Liu +17
In layered LiNixMnyCozO2 cathode material for lithium-ion batteries, the spins of transition metal (TM) ions construct a two-dimensional triangular networks, which can be considere…
Molecular dynamics study on the microstructure of CH3COOLi solutions with different concentrations
Guoyu Tan, Jiaxin Zheng, Feng Pan
Due to the toxic and flammable problems of organic electrolytes, the study on concentrated aqueous system for lithium ion batteries (LIBs) has attracted wide attention. In this pap…
Spontaneous Valley Splitting and Valley Pseudospin Field Effect Transistor of Monolayer VAgP2Se6
Zhigang Song, Xiaotian Sun, Jingshan Qi +6
Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum…
Silicene Nanomesh
Feng Pan, Yangyang Wang, Kaili Jiang +8
Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal tha…
All-Metallic Vertical Transistors Based on Stacked Dirac Materials
Yangyang Wang, Zeyuan Ni, Qihang Liu +7
It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (su…
Does the Dirac Cone Exist in Silicene on Metal Substrates?
Ruge Quhe, Yakun Yuan, Jiaxin Zheng +6
Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calcula…
Tunable band gap in germanene by surface adsorption
Meng Ye, Ruge Quhe, Jiaxin Zheng +7
Opening a sizable band gap in the zero-gap germanene without heavy loss of carrier mobility is a key issue for its application in nanoelectronic devices such as high-performance fi…
Strong Band Hybridization between Silicene and Ag(111)Substrate
Yakun Yuan, Ruge Quhe, Jiaxin Zheng +4
By using first-principles calculations, we systematically investigated several observed phases of silicene on Ag(111) substrates and their electronic structures. We find that the o…
Tunable band gap in few-layer graphene by surface adsorption
Ruge Quhe, Jianhua Ma, Zesheng Zeng +8
There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires tw…
Half-Metallic Silicene and Germanene Nanoribbons: towards High-Performance Spintronics Device
Yangyang Wang, Jiaxin Zheng, Zeyuan Ni +7
By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nan…