All-Metallic Vertical Transistors Based on Stacked Dirac Materials

Abstract

It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch. First-principles quantum transport simulations of the all-metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 104. Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, all-metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high-performance devices without opening their band gaps.

7 figures

References in corpus (22)

• Electric Field Effect in Atomically Thin Carbon Films
• Density functional method for nonequilibrium electron transport
• Field-effect tunneling transistor based on vertical graphene heterostructures
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
• The interlayer cohesive energy of graphite from thermal desorption of polyaromatic hydrocarbons
• Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
• Atomically thin boron nitride: a tunnelling barrier for graphene devices
• Electronic transport in polycrystalline graphene
• Evidence for Dirac Fermions in a honeycomb lattice based on silicon
• Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
• Spontaneous Symmetry Breaking and Dynamic Phase Transition in Monolayer Silicene
• Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: towards Tunneling Transistors
• Microscopic theory of quantum anomalous Hall effect in graphene
• Silicon Layer Intercalation of Centimeter-Scale, Epitaxially-Grown Monolayer Graphene on Ru(0001)
• Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates
• Silicene Beyond Mono-layers - Different Stacking Configurations And Their Properties
• Interlayer coupling in rotationally faulted multilayer graphenes
• Realization of free-standing silicene using bilayer graphene
• Possibility of a Metallic Field-Effect Transistor
• First-principles study on competing phases of silicene: Effect of substrate and strain
• Electrical transport in suspended and double gated trilayer graphene

Cited by in corpus (5)

• Valley filtering and electronic optics using polycrystalline graphene
• Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect
• Evolution of magnetic Dirac bosons in a honeycomb lattice
• Transport properties through graphene grain boundaries: strain effects versus lattice symmetry
• Electronic resistances of multilayered two-dimensional crystal junctions