Possibility of a Metallic Field-Effect Transistor

Abstract

We develop theoretical arguments that demonstrate the possibility of metallic field-effect transistors (METFET's) in one-dimensional systems and particularly in armchair carbon nanotubes. A very inhomogeneous electric field, such as the field of a tunnelling tip, can penetrate the relatively weakly screened nanotubes and open an energy gap. As a consequence, an energy barrier forms that impedes electron flow and thus permits transistor action. This type of metallic field effect is advantageous because of the high conductance of the metallic tubes in the ON--state.

version from 1/11/04

References in corpus (2)

• Carbon Nanotubes as Schottky Barrier Transistors
• Electronic response and bandstructure modulation of carbon nanotubes in a transverse electrical field

Cited by in corpus (7)

• Electric Field Effect in Atomically Thin Carbon Films
• All-Metallic Vertical Transistors Based on Stacked Dirac Materials
• Band Gaps in Jagged and Straight Graphene Nanoribbons Tunable by an External Electric Field
• Transport in Nanotubes: Effect of Remote Impurity Scattering
• Metal-Semiconductor Transition and Fermi Velocity Renormalization in Metallic Carbon Nanotubes
• Metal-Semiconductor Transition in Armchair Carbon Nanotubes by Symmetry Breaking
• Electron transport in armchair single-wall carbon nanotubes