Metal-Semiconductor Transition in Armchair Carbon Nanotubes by Symmetry Breaking
arXiv:cond-mat/0409464 · doi:10.1063/1.1811792
Abstract
The electronic band structure of armchair carbon nanotubes may be considerably modified by potentials with angular dependence. Different angular modes V_q ~ cos(q*theta) have been studied within a tight-binding scheme. Using symmetry arguments, we demonstrate a bandgap opening in these metallic nanotubes when certain selection rules are satisfied for both potential and nanotube structure. We estimate the bandgap opening as a function of both the external potential strength and the nanotube radius and suggest an effective mechanism of metal-semiconductor transition by combination of different forms of perturbations.
arXiv comment3 pages, 3 figures, published on APL
References in corpus (6)
- Size, Shape and Low Energy Electronic Structure of Carbon Nanotubes
- Metal-to-semiconductor transition in squashed armchair carbon nanotubes
- Electronic response and bandstructure modulation of carbon nanotubes in a transverse electrical field
- Reversible Band Gap Engineering in Carbon Nanotubes by Radial Deformation
- Carbon Nanotubes Band Assignation, Topology, Bloch States and Selection Rules
- Possibility of a Metallic Field-Effect Transistor