activity
20022019
most citedImpact of Phonon Surface Roughness Scattering on Thermal Conductivity of Thin Si Nanowires

368 citations · 799 across the 8 of their papers we have counts for

collaborators

8 papers

cs.LG2019★ 241 cited

Prediction and optimization of mechanical properties of composites using convolutional neural networks

Diab W. Abueidda, Mohammad Almasri, Rami Ammourah +3

In this paper, we develop a convolutional neural network model to predict the mechanical properties of a two-dimensional checkerboard composite quantitatively. The checkerboard com…

cond-mat.mes-hall2011★ 6 cited

A Backscattering Model Incorporating the Effective Carrier Temperature in Nano MOSFET

Gino Giusi, Giuseppe Iannaccone, Felice Crupi +1

In this work we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This…

cond-mat.other2009★ 368 cited

Impact of Phonon Surface Roughness Scattering on Thermal Conductivity of Thin Si Nanowires

Pierre Martin, Zlatan Aksamija, Eric Pop +1

We present a novel approach for computing the surface roughness-limited thermal conductivity of silicon nanowires with diameter D < 100 nm. A frequency-dependent phonon scattering…

cond-mat.mes-hall2008★ 1 cited

Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation

G. Giusi, G. Iannaccone, U. Ravaioli

In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations. Warm electron…

cond-mat.mes-hall2008★ 6 cited

Study of Warm Electron Injection in Double Gate SONOS by Full Band Monte Carlo Simulation

G. Giusi, G. Iannaccone, M. Mohamed +1

In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Elect…

cond-mat.mes-hall2005★ 18 cited

Metal-Semiconductor Transition and Fermi Velocity Renormalization in Metallic Carbon Nanotubes

Yan Li, Slava V. Rotkin, Umberto Ravaioli

Angular perturbations modify the band structure of armchair (and other metallic) carbon nanotubes by breaking the tube symmetry and may induce a metal-semiconductor transition when…