211 citations · 692 across the 8 of their papers we have counts for
8 papers
Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?
Yangyang Wang, Ruoxi Yang, Ruge Quhe +9
Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative…
Monolayer Phosphorene-Metal Interfaces
Yuanyuan Pan, Yangyang Wang, Meng Ye +9
Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact p…
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
Hongxia Zhong, Zeyuan Ni, Yangyang Wang +8
Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal…
Graphdiyne-metal contacts and graphdiyne transistors
Yuanyuan Pan, Yangyang Wang, Lu Wang +9
Graphdiyne is prepared on metal surface, and making devices out of it also inevitably involves contact with metals. Using density functional theory with dispersion correction, we s…
All-Metallic Vertical Transistors Based on Stacked Dirac Materials
Yangyang Wang, Zeyuan Ni, Qihang Liu +7
It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (su…
Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap
Zhigang Song, Cheng-Cheng Liu, Jinbo Yang +7
Large bulk band gap is critical for application of the quantum spin Hall (QSH) insulator or two dimensional (2D) topological insulator (TI) in spintronic device operating at room t…