Silicon Layer Intercalation of Centimeter-Scale, Epitaxially-Grown Monolayer Graphene on Ru(0001)
arXiv:1112.4228 · doi:10.1063/1.3687190
Abstract
We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties.
13 pages, 4 figures, to be published in Appl. Phys. Lett
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Cited by in corpus (7)
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- Epitaxial Growth of Large-area Bilayer Graphene on Ru(0001)
- Graphene-Silicon Layered Structures on Single-crystalline Ir(111) Thin Films
- Intercalating cobalt between graphene and iridium (111): a spatially-dependent kinetics from the edges
- One-dimensional Si chains embedded in Pt(111)and protected by a hexagonal boron-nitride monolayer