Electrical transport in suspended and double gated trilayer graphene

Abstract

We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and ballistic electric transport on a scale larger than 200nm. We report a particularly large on/off ratio of the current in ABC-stacked trilayers, up to 250 for an average electric displacement of -0.08 V/nm, compatible with an electric field induced energy gap. The high quality of these devices is also demonstrated by the appearance of quantum Hall plateaus at magnetic fields as low as 500mT.

to appear in Applied Physics Letters. Typos corrected and references updated

References in corpus (15)

• The electronic properties of graphene
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• Micrometer-scale ballistic transport in encapsulated graphene at room temperature
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• Electronic states and Landau levels in graphene stacks
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• Observation of an electrically tunable band gap in trilayer graphene
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Cited by in corpus (19)

• Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field
• Graphdiyne-metal contacts and graphdiyne transistors
• Networks of ABA and ABC stacked graphene on mica observed by scanning tunneling microscopy
• Single- and multi-mode Fabry-Pérot interference in suspended graphene
• All-Metallic Vertical Transistors Based on Stacked Dirac Materials
• Interacting electrons on trilayer honeycomb lattices
• Direct observation of a gate tunable band-gap in electrical transport in ABC-trilayer graphene
• Hund's Rules for the N=0 Landau Levels of Trilayer Graphene
• Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene
• Multilayer graphenes with mixed stacking structure: interplay of Bernal and rhombohedral stacking
• Landau level splittings, phase transitions, and non-uniform charge distribution in trilayer graphene
• Contact doping, Klein tunneling, and asymmetry of shot noise in suspended graphene
• Electrically tunable plasma excitations in AA-stacking multilayer graphene
• Observation of Chirality Transition of Quasiparticles at Stacking Solitons in Trilayer Graphene
• Molybdenum-Rhenium superconducting suspended nanostructures
• Intrinsic and substrate induced spin-orbit interaction in chirally stacked trilayer graphene
• Tunable Infrared Phonon Anomalies in Trilayer Graphene
• Combined Effect of Stacking and Magnetic Field on Plasmon Excitations in Bilayer Graphene
• Vacancy induced zero energy modes in graphene stacks: The case of ABC trilayer