Landau level splittings, phase transitions, and non-uniform charge distribution in trilayer graphene

Abstract

We report on magneto-transport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase which indicates a complete lifting of the twelve-fold degeneracy of the zeroth Landau level. As a function of perpendicular electric field, our data exhibits a sequence of phase transitions between all integer quantum Hall states in the filling factor interval $-8<\nu <0$. We develop a theoretical model and argue that, in contrast to monolayer and bilayer graphene, the observed Landau level splittings and quantum Hall phase transitions can be understood within a single-particle picture, but imply the presence of a charge density imbalance between the inner and outer layers of TLG, even at charge neutrality and zero transverse electric field. Our results indicate the importance of a previously unaccounted band structure parameter which, together with a more accurate estimate of the other tight-binding parameters, results in a significantly improved determination of the electronic and Landau level structure of TLG.

Accepted for publication in PRL

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• Dirac cones for bi- and trilayer Bernal-stacked graphene in a quantum graph model
• Magnetoconductance Oscillations in Electron-hole Hybridization Gaps and Valley Splittings in Tetralayer Graphene
• Correlated interlayer quantum Hall state in large-angle twisted trilayer graphene