Multiband ballistic transport and anisotropic commensurability magnetoresistance in antidot lattices of AB-stacked trilayer graphene
arXiv:1912.03833 · doi:10.7566/JPSJ.89.044703
Abstract
Ballistic transport was studied in a multiple-band system consisting of an antidot lattice of AB-stacked trilayer graphene. The low temperature magnetoresistance showed commensurability peaks arising from matching of the antidot lattice period and radius of cyclotron orbits for each mono- and bilayer-like band in AB stacked trilayer graphene. The commensurability peak of the monolayer-like band appeared at a lower magnetic field than that of the bilayer-like band, which reflects the fact that the Fermi surface of the bilayer-like band is larger than that of monolayer-like band. Rotation of the antidot lattice relative to the crystallographic axes of graphene resulted in anisotropic magnetoresistance, which reflects the trigonally warped Fermi surface of the bilayer-like band. Numerical simulations of magnetoresistance that assumed ballistic transport in the mono- and bilayer-like bands approximately reproduced the observed magnetoresistance features. It was found that the monolayer-like band significantly contributes to the conductivity even though its carrier density is an order smaller than that of the bilayer-like band. These results indicate that ballistic transport experiments could be used for studying the anisotropic band structure of multiple-band systems.
References in corpus (40)
- The electronic properties of graphene
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Electronic transport in two dimensional graphene
- Making graphene visible
- Hofstadter's butterfly in moire superlattices: A fractal quantum Hall effect
- Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure
- Cloning of Dirac fermions in graphene superlattices
- Asymmetry gap in the electronic band structure of bilayer graphene
- Weak localisation magnetoresistance and valley symmetry in graphene
- Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene
- First direct observation of a nearly ideal graphene band structure
- Band Structure of ABC-Stacked Graphene Trilayers
- Electronic Structure of Few-Layer Graphene: Experimental Demonstration of Strong Dependence on Stacking Sequence
- Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
- Transport in Bilayer Graphene: Calculations within a self-consistent Born approximation
- Visibility of graphene flakes on a dielectric substrate
- Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene
- Chiral Decomposition in the Electronic Structure of Graphene Multilayers
- Orbital diamagnetism in multilayer graphenes: Systematic study with the effective mass approximation
- Second generation Dirac cones and inversion symmetry breaking induced gaps in graphene/hexagonal boron nitride
- The experimental observation of quantum Hall effect of l = 3 chiral charge carriers in trilayer graphene
- Electrically tunable transverse magnetic focusing in graphene
- Electronic structure of multilayer graphene
- Influence of trigonal warping on interference effects in bilayer graphene
- Integer Quantum Hall Effect in Trilayer Graphene
- Electric transport and magnetic properties in multilayer graphene
- Ballistic transport in graphene antidot lattices
- Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
- Magnetoconductance Oscillations in High-Mobility Suspended Bilayer and Trilayer Graphene
- Visibility study of graphene multilayer structures
- Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene
- Multilayer graphenes with mixed stacking structure: interplay of Bernal and rhombohedral stacking
- Landau level splittings, phase transitions, and non-uniform charge distribution in trilayer graphene
- Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy
- Gate-induced Dirac cones in multilayer graphenes
- Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene
- Inter-subband Landau level couplings induced by in-plane magnetic fields in trilayer graphene
- Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence
- Low energy band structure in Bernal stacked hexlayer graphene: Landau fan diagram and resistance ridge
- Band structure asymmetry of bilayer graphene revealed by infrared spectroscopy