Electric transport and magnetic properties in multilayer graphene

Abstract

We discuss electric transport and orbital magnetism of multilayer graphenes in a weak-magnetic field using the matrix decomposition technique. At zero temperature, the minimum conductivity is given by that of the monolayer system multiplied by the layer number $N$, independent of the interlayer hopping $t$. When the interlayer hopping satisfies the condition $t\gg \hslash /\tau$ with $\tau$ being collision time of impurity scattering, $[N/2]$ kinks and $[N/2]+1$ plateaux appear in the Fermi-energy (gate voltage) dependence of the conductivity and the Hall conductivity, respectively. These behaviors are interpreted as multiband effects. We also found that the Hall conductivity and the magnetic susceptibility take minimum value as a function of temperature, for certain value of the gate voltage. This behavior is explained by Fermi-energy dependence of these functions at zero temperature.

11 pages, 11 figures

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• Imaging Stacking Order in Few-Layer Graphene
• Interaction-induced insulating state in thick multilayer graphene
• Hall Coefficient of Dirac Fermions in Graphene under Charged Impurity Scatterings
• Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization
• On dielectric screening in twisted double bilayer graphene
• Correlated phases in rhombohedral multilayer graphene
• Bound states of quasiparticles with quartic dispersion in an external potential: WKB approach
• Dynamical polarization in ABC-stacked multilayer graphene in a magnetic field
• Topological invariant of multilayer Haldane models with irregular stackings